1

1 - 111

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

Outline Drawing

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

7 Vdc

RF Input Power (RFin)(Vdd = +5.0 Vdc)

+15 dBm

Channel Temperature

150 °C

Continuous Pdiss (T = 85 °C)

(derate 18 mW/°C above 85 °C)

1.17 W

Thermal Resistance

(channel to ground pad)

55 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

Vdd (V)

Idd (mA)

+5.5

160

+6.0

170

+6.5

180

Note: Amplifier will operate over full voltage range shown above

Typical Supply Current vs. Vdd

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

GaAs PHEMT MMIC LOW NOISE

AMPLIFIER, 2 - 4 GHz

HMC609

v01.0707

NOTES:

1. ALL DIMENSIONS IN INCHES [MILLIMETERS]

2. DIE THICKNESS IS 0.007”

3. TYPICAL BOND PAD IS 0.004” SQUARE

4. BACKSIDE METALLIZATION: GOLD

5. BACKSIDE METAL IS GROUND

6. BOND PAD METALIZATION: GOLD

7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS

8. OVERALL DIE SIZE ±0.002”

Standard

Alternate

?

[2]

[1] Refer to the “Packaging Information” section for die

packaging dimensions.

[2] For alternate packaging information contact Hittite

Microwave Corporation.