Electronic Components Datasheet Search |
|
SKM50GB123D Datasheet(PDF) 1 Page - Semikron International |
|
SKM50GB123D Datasheet(HTML) 1 Page - Semikron International |
1 / 6 page SEMITRANS® M IGBT Modules SKM 50 GB 123 D SKM 50 GAL 123 D GB GAL Features • MOS input (voltage controlled) • N channel, Homogeneous Si • Low inductance case • Very low tail current with low temperature dependence • High short circuit capability, self limiting to 6 * Icnom • Latch-up free • Fast & soft inverse CAL diodes 8) • Isolated copper baseplate using DCB Direct Copper Bon- ding Technology • Large clearance (10 mm) and creepage distances (20 mm). Typical Applications: → B 6 - 85 • Three phase inverter drives • Switching (not for linear use) 1) Tcase = 25 °C, unless otherwise specified 2) IF = – IC, VR = 600 V, – diF/dt = 800 A/ µs, VGE = 0 V 3) Use VGEoff = -5 ... -15 V 5) See fig. 2 + 3; RGoff = 27 Ω 8) CAL = Controlled Axial Lifetime Technology. Case and mech. data → B 6 - 86 SEMITRANS 2 SEMITRANS 2 Absolute Maximum Ratings Values Symbol Conditions 1) ... 123 D Units VCES 1200 V VCGR RGE = 20 k Ω 1200 V IC Tcase = 25/80 °C 50 / 40 A ICM Tcase = 25/80 °C; tp = 1 ms 100 / 80 A VGES ± 20 V Ptot per IGBT, Tcase = 25 °C 310 W Tj, (Tstg) – 40 . . .+150 (125) °C Visol AC, 1 min. 2 500 V humidity DIN 40 040 Class F climate DIN IEC 68 T.1 40/125/56 Diodes IF= – IC Tcase = 25/80 °C 50 / 40 A IFM= – ICM Tcase = 25/80 °C; tp = 1 ms 100 / 80 A IFSM tp = 10 ms; sin.; Tj = 150 °C 550 I 2ttp = 10 ms; Tj = 150 °C 1500 A 2s Characteristics Symbol Conditions 1) min. typ. max. Units V(BR)CES VGE = 0, IC = 1 mA ≥ VCES –– V VGE(th) VGE = VCE, IC = 2 mA 4,5 5,5 6,5 V ICES VGE = 0 Tj = 25 °C– 0,3 1 mA VCE = VCES Tj = 125 °C –3– mA IGES VGE = 20 V, VCE = 0 – – 200 nA VCEsat IC = 40 A VGE = 15 V; – 2,5(3,1) 3(3,7) V VCEsat IC = 50 A Tj = 25 (125) °C – 2,7(3,5) – V gfs VCE = 20 V, IC = 40 A 30 – S CCHC per IGBT – – 350 pF Cies VGE = 0 – 3300 4000 pF Coes VCE = 25 V – 500 600 pF Cres f = 1 MHz – 220 300 pF LCE – – 30 nH td(on) VCC = 600 V – 70 – ns tr VGE = + 15 V / - 15 V 3) –60 – ns td(off) IC = 40 A, ind. load – 400 – ns tf RGon = RGoff = 27 Ω –45 – ns Eon 5) Tj = 125 °C– 7 – mWs Eoff 5) –4,5 – mWs Diodes 8) VF = VEC IF = 40 A VGE = 0 V; – 1,85(1,6) 2,2 V VF = VEC IF = 50 A Tj = 25 (125) °C – 2,0(1,8) – V VTO Tj = 125 °C – – 1,2 V rT Tj = 125 °C – – 22 m Ω IRRM IF = 40 A; Tj = 25 (125) °C 2) – 23(35) – A Qrr IF = 40 A; Tj = 25 (125) °C2) –2,3(7) – µC Thermal Characteristics Rthjc per IGBT – – 0,4 °C/W Rthjc per diode – – 0,7 °C/W Rthch per module – – 0,05 °C/W © by SEMIKRON 0898 B 6 – 81 |
Similar Part No. - SKM50GB123D |
|
Similar Description - SKM50GB123D |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |