SKM50GB123D datasheet(1/6 Pages) SEMIKRON

Part #	SKM50GB123D

Description	SEMITRANS짰 M IGBT Modules

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Manufacturer	SEMIKRON [Semikron International]

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SEMITRANS® M

IGBT Modules

SKM 50 GB 123 D

SKM 50 GAL 123 D

GB

GAL

Features

• MOS input (voltage controlled)

• N channel, Homogeneous Si

• Low inductance case

• Very low tail current with low

temperature dependence

• High short circuit capability,

self limiting to 6 * Icnom

• Latch-up free

• Fast & soft inverse CAL

diodes

8)

• Isolated copper baseplate

using DCB Direct Copper Bon-

ding Technology

• Large clearance (10 mm) and

creepage distances (20 mm).

Typical Applications:

→ B 6 - 85

• Three phase inverter drives

• Switching (not for linear use)

1)

Tcase = 25

°C, unless otherwise

specified

2)

IF = – IC, VR = 600 V,

– diF/dt = 800 A/

µs, VGE = 0 V

3)

Use VGEoff = -5 ... -15 V

5)

See fig. 2 + 3; RGoff = 27

Ω

8)

CAL = Controlled Axial Lifetime

Technology.

Case and mech. data

→ B 6 - 86

SEMITRANS 2

Absolute Maximum Ratings

Values

Symbol

Conditions

1)

... 123 D

Units

VCES

1200

V

VCGR

RGE = 20 k

Ω

1200

V

IC

Tcase = 25/80

°C

50 / 40

A

ICM

Tcase = 25/80

°C; tp = 1 ms

100 / 80

A

VGES

± 20

V

Ptot

per IGBT, Tcase = 25

°C

310

W

Tj, (Tstg)

– 40 . . .+150 (125)

°C

Visol

AC, 1 min.

2 500

V

humidity

DIN 40 040

Class F

climate

DIN IEC 68 T.1

40/125/56

Diodes

IF= – IC

Tcase = 25/80

°C

50 / 40

A

IFM= – ICM

Tcase = 25/80

°C; tp = 1 ms

100 / 80

A

IFSM

tp = 10 ms; sin.; Tj = 150 °C

550

I

2ttp = 10 ms; Tj = 150 °C

1500

A

2s

Characteristics

Symbol

Conditions

1)

min.

typ.

max.

Units

V(BR)CES

VGE = 0, IC = 1 mA

≥ VCES

––

V

VGE(th)

VGE = VCE, IC = 2 mA

4,5

5,5

6,5

V

ICES

VGE = 0

Tj = 25

°C–

0,3

1

mA

VCE = VCES

Tj = 125

°C

–3–

mA

IGES

VGE = 20 V, VCE = 0

–

200

nA

VCEsat

IC = 40 A

VGE = 15 V;

–

2,5(3,1)

3(3,7)

V

VCEsat

IC = 50 A

Tj = 25 (125)

°C

–

2,7(3,5)

–

V

gfs

VCE = 20 V, IC = 40 A

30

–

S

CCHC

per IGBT

–

350

pF

Cies

VGE = 0

–

3300

4000

pF

Coes

VCE = 25 V

–

500

600

pF

Cres

f = 1 MHz

–

220

300

pF

LCE

–

30

nH

td(on)

VCC = 600 V

–

70

–

ns

tr

VGE = + 15 V / - 15 V

3)

–60

–

ns

td(off)

IC = 40 A, ind. load

–

400

–

ns

tf

RGon = RGoff = 27

Ω

–45

–

ns

Eon

5)

Tj = 125

°C–

7

–

mWs

Eoff

5)

–4,5

–

mWs

Diodes

8)

VF = VEC

IF = 40 A

VGE = 0 V;

–

1,85(1,6)

2,2

V

VF = VEC

IF = 50 A

Tj = 25 (125)

°C

–

2,0(1,8)

–

V

VTO

Tj = 125 °C

–

1,2

V

rT

Tj = 125 °C

–

22

m

Ω

IRRM

IF = 40 A; Tj = 25 (125) °C

2)

–

23(35)

–

A

Qrr

IF = 40 A; Tj = 25 (125)

°C2)

–2,3(7)

–

µC

Thermal Characteristics

Rthjc

per IGBT

–

0,4

°C/W

Rthjc

per diode

–

0,7

°C/W

Rthch

per module

–

0,05

°C/W















































0898

B 6 – 81

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