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MUR840 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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MUR840 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 2 page - 374 - .412(10.5) MAX .185(4.70) .175(4.44) .055(1.40) .045(1.14) .27(6.86) .23(5.84) .11(2.79) .10(2.54) .025(0.64) .014(0.35) .154(3.91) .148(3.74) DIA PIN1 2 .113(2.87) .103(2.62) .16(4.06) .14(3.56) .037(0.94) .027(0.68) .205(5.20) .195(4.95) .594(15.1) .587(14.9) .56(14.22) .53(13.46) PIN 1 PIN 2 Case Positive CASE MUR820 THRU MUR860 8.0 AMPS. Ultrafast Plastic Rectifiers Voltage Range 200 to 600 Volts Current 8.0 Amperes Features Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data Cases: to-220a molded plastic Epoxy: UL 94V-0 rate flame retardant Terminals: Leads, solderable per MIL-STD- 202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: 260 ℃/10 seconds/.25”,(6.35mm) from case. Weight: 2.24 grams TO-220A Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 ℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol MUR820 MUR840 MUR860 Units Maximum Recurrent Peak Reverse Voltage VRRM 200 400 600 V Maximum RMS Voltage VRMS 140 280 420 V Maximum DC Blocking Voltage VDC 200 400 600 V Maximum Average Forward Rectified Current .375”(9.5mm) Lead Length (See Fig. 1) I(AV) 8.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 100 A Maximum Instantaneous Forward Voltage @ 8.0A VF 0.975 1.30 1.7 V Maximum DC Reverse Current @ TC=25 ℃ at Rated DC Blocking Voltage @ TC=150 ℃ (Note 4) IR 5.0 250 uA uA Maximum Reverse Recovery Time ( Note 2 ) Trr 25 50 nS Typical Thermal Resistance (Note 3) R θJC 3.0 2.0 ℃/W Operating Temperature Range TJ -65 to +175 ℃ Storage Temperature Range TSTG -65 to +175 ℃ Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4..0 Volts D.C. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 3. Thermal Resistance from Junction to Case, Mounted on Heatsink Size of 2” x 3” x 0.25” Al-Plate. 4. Pulse lest: tp = 300 uS, Duty Cycle < 2%. |
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