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SDB110 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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SDB110 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 2 page Dimensions in inches and (millimeters) Version: A06 .404(10.3) .386(9.80) .255(6.5) .245(6.2) .013(0.33) .0088(0.22) .013(0.33) .003(0.076) .060(1.53) .040(1.02) .205(5.2) .195(5.0) .047(1.20) .040(1.02) .335(8.51) .320(8.13) 0 45 .130(3.30) .120(3.05) SDB(S)12 - SDB(S)115 1.0 AMP. Schottky Barrier Bridge Rectifiers DB DBS Features Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial construction High temperature soldering: 260 oC/ 10 seconds at terminals Small size, single installation lead solderable per MIL-STD-202 Method 208 Mechanical Data Case: Molded plastic Terminals: Pure tin plated, lead free. Polarity: Indicated by cathode band Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% SDB 12 SDB 13 SDB 14 SDB 15 SDB 16 SDB 19 SDB 110 SDB 115 Type Number Symbol SDBS 12 SDBS 13 SDBS 14 SDBS 15 SDBS 16 SDBS 19 SDBS 110 SDBS 115 Units Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 60 90 100 150 V Maximum RMS Voltage VRMS 14 21 28 35 42 63 70 105 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 90 100 150 V Maximum Average Forward Rectified Current at TL(See Fig. 1) I(AV) 1.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 30 A Maximum Instantaneous Forward Voltage (Note 1) @ 1.0A VF 0.5 0.75 0.80 0.95 V 0.4 0.1 Maximum DC Reverse Current @ TA =25 oC at Rated DC Blocking Voltage @ TA=100 oC IR 10 5.0 0.5 mA mA Typical Junction Capacitance (Note 3) Cj 50 pF Typical Thermal Resistance ( Note 2 ) R θJL RθJA 28 88 oC /W Operating Temperature Range TJ -65 to +125 -65 to +150 oC Storage Temperature Range TSTG -65 to +150 oC Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle 2. Measured on P.C.Board with 0.5” x 0.5” (12 mm x 12mm) Copper Pad Areas. 3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. |
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Similar Description - SDB110 |
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