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TISP3125F3 Datasheet(PDF) 1 Page - Power Innovations Ltd

Part # TISP3125F3
Description  DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
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Manufacturer  POINN [Power Innovations Ltd]
Direct Link  http://www.bourns.com
Logo POINN - Power Innovations Ltd

TISP3125F3 Datasheet(HTML) 1 Page - Power Innovations Ltd

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TISP3125F3, TISP3150F3, TISP3180F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
PRODUCT
INFORMATION
1
MARCH 1994 - REVISED SEPTEMBER 1997
Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
q
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
q
Planar Passivated Junctions
Low Off-State Current
< 10 µA
q
Rated for International Surge Wave Shapes
q
Surface Mount and Through-Hole Options
q
UL Recognized, E132482
description
These
medium
voltage
dual
symmetrical
transient
voltage
suppressor
devices
are
designed to protect ISDN and telecommunication
applications with ground backed ringing against
transients caused by lightning strikes and a.c.
power lines. Offered in three voltage variants to
meet battery and protection requirements they
are guaranteed to suppress and withstand the
listed international lightning surges in both
polarities. Transients are initially clipped by
breakdown clamping until the voltage rises to the
breakover level, which causes the device to
DEVICE
VDRM
V
V(BO)
V
‘3125F3
100
125
‘3150F3
120
150
‘3180F3
145
180
WAVE SHAPE
STANDARD
ITSP
A
2/10 µs
FCC Part 68
175
8/20 µs
ANSI C62.41
120
10/160 µs
FCC Part 68
60
10/560 µs
FCC Part 68
45
0.5/700 µs
RLM 88
38
10/700 µs
FTZ R12
VDE 0433
CCITT IX K17/K20
50
50
50
10/1000 µs
REA PE-60
35
PACKAGE
PART # SUFFIX
Small-outline
D
Small-outline taped
and reeled
DR
Plastic DIP
P
Single-in-line
SL
crowbar. The high crowbar holding current
prevents d.c. latchup as the current subsides.
These
monolithic
protection
devices
are
fabricated in ion-implanted planar structures to
device symbol
G
T
R
Terminals T, R and G correspond to the
alternative line designators of A, B and C
SD3XAA
D PACKAGE
(TOP VIEW)
P PACKAGE
(TOP VIEW)
SL PACKAGE
(TOP VIEW)
MDXXAE
1
2
3
4
5
6
7
8
G
G
G
G
NC
T
R
NC
NC - No internal connection
1
2
3
4
5
6
7
8
R
G
T
G
T
G
G
R
Specified T terminal ratings require connection of pins 1 and 8.
Specified R terminal ratings require connection of pins 4 and 5.
MDXXAF
1
2
3
T
G
R
MDXXAG
MD23AA


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