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TYN612M Datasheet(PDF) 2 Page - STMicroelectronics |
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TYN612M Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 8 page Characteristics TYN612M 2/8 1 Characteristics Table 2. Electrical characteristics (Tj = 25° C, unless otherwise specified) Symbol Test Conditions Value Unit IGT VD = 12 V RL = 140 Ω MIN. 1.5 mA MAX. 5 VGT VD = 12 V RL = 140 Ω MIN. 0.5 V TYP. 0.7 MAX. 1.3 VGD VD = VDRM RL = 3.3 kΩ Tj = 125° C MIN. 0.2 V IH IT = 500 mA Gate open MAX. 20 mA IL IG = 1.2 IGT MAX. 40 mA dV/dt VD = 67 % VDRM Gate open Tj =125° C MIN. 50 V/µs VTM ITM = 24 A tp = 380 µs Tj = 25° C MAX. 1.6 V Vt0 Threshold voltage Tj = 125° C MAX. 0.85 V Rd Dynamic resistance Tj = 125° C MAX. 30 m Ω IDRM IRRM VDRM = VRRM Tj = 25° C MAX. 5µA Tj = 125° C 2 mA Table 3. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case (DC) TO-220AB 1.3 ° C/W TO-220FPAB 4.5 Rth(j-a) Junction to ambient (DC) TO-220AB 55 ° C/W TO-220FPAB 55 Figure 1. Maximum average power dissipation versus average on-state current Figure 2. Average and D.C. on-state current versus case temperature (TO-220AB) 0 1 2 3 4 5 6 7 8 9 10 11 12 012 3456 78 9 P(W) I (A) T(AV) α = 180° 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 0 25 50 75 100 125 I (A) T(AV) T (°C) C α = 180° D.C. |
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