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LB1201AB Datasheet(PDF) 2 Page - Power Innovations Ltd |
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LB1201AB Datasheet(HTML) 2 Page - Power Innovations Ltd |
2 / 14 page TISP61060D, TISP61060P DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS 2 SEPTEMBER 1995 - REVISED SEPTEMBER 1997 PRODUCT INFORMATION These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and in normal system operation they are virtually transparent. The buffered gate design reduces the loading on the SLIC supply during overvoltages caused by power cross and induction. NOTES: 1. Initially the protector must be in thermal equilibrium with -40°C ≤ T J ≤ 85°C. The surge may be repeated after the device returns to its initial conditions. 2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the rated current value of an individual terminal pair). Above 85°C, derate linearly to zero at 150°C lead temperature. absolute maximum ratings RATING SYMBOL VALUE UNIT Repetitive peak off-state voltage, IG = 0, -40°C ≤ TJ ≤ 85°C VDRM -100 V Repetitive peak gate-cathode voltage, VKA = 0, -40°C ≤ TJ ≤ 85°C VGKRM -85 V Non-repetitive peak on-state pulse current (see Notes 1 and 2) ITSP A 10/1000 µs 30 10/160 µs 45 2/10 µs 50 Non-repetitive peak on-state current (see Notes 1 and 2) ITSM Arms 60 Hz sine-wave, 25 ms 6 60 Hz sine-wave, 2 s 1 Continuous on-state current (see Note 2) ITM 0.3 A Continuous forward current (see Note 2) IFM 0.3 A Operating free-air temperature range TA -40 to +85 °C Storage temperature range Tstg -40 to +150 °C Lead temperature 1,6 mm (1/16 inch) from case for 10 s TL 260 °C recommended operating conditions MIN TYP MAX UNIT CG Gate decoupling capacitor 100 nF electrical characteristics, -40°C ≤ T J ≤ 85°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ID Off-state current VD = -85 V, VGK = 0 V TJ = 25°C 5 µA TJ = 85°C 50 µA V(BO) Breakover voltage dv/dt = -250 V/ms, Source Resistance = 300 Ω, V GG = -50 V dv/dt = -250 V/ms, Source Resistance = 300 Ω, V GG = -65 V IT = 12.5 A, 10/1000 µs, Source Resistance = 80 Ω, VGG = -50 V -53 -68 -55 V IS Switching current dv/dt = -250 V/ms, Source Resistance = 300 Ω, V GG = -50 V -100 mA VT On-state voltage IT = 1 A IT = 10 A IT = 16 A IT = 30 A 3 4 5 7 V VF Forward voltage IF = 1 A IF = 10 A IF = 16 A IF = 30 A 2 4 5 5 V IH Holding current IT = -1 A, di/dt = +1A/ms, VGG = -50 V -150 mA |
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