Part Name
         Description
TS4148

 0.5AMPS High Speed Switching Diode ( 2 Page)


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Dimensions in inches and (millimeters)
- 608 -
Version: B07
TS4148
0.5AMPS High Speed Switching Diode
Item
1206
0805
L
0.135(3.40)
0.119(3.0)
0.088(2.20)
0.072(1.8)
W
0.07(1.70)
0.054(1.30)
0.058(1.45)
0.042(1.05)
T
0.038(0.95)
0.03(0.75)
0.038(0.95)
0.03(0.75)
C
0.03(0.75)
0.014(0.35)
0.026(0.65)
0.01(0.25)
Features
For surface mounted application
Low forward voltage drop
High Current capability
Fast switching for high efficiency
High surge current capability
Chip version in 1206 and 0805
High temperature soldering:
260oC / 10 secondsat terminals
Mechanical Data
Cases: 0805, 1206
Terminals: Pure tin plated lead free,
Polarity: indicated by cathode arrow
Packaging: 8 mm tape per EIA STD
RS-481
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
0805
1206
Units
Maximum Repetitive Peak Reverse Voltage
VRRM
100
V
Reverse Voltage
VR
75
V
Maximum Average Forward Rectified Current
Resistive Load f>50Hz
IF(AV)
150
mA
500
Peak Forward Surge Current
8.3 ms
Half Sine-wave
1 uS
IFSM
2.0
mA
A
Maximum Instantaneous Forward Voltage
@100mA
VF
1.0
V
Maximum D.C. Reverse Current @ Tc=25
oC
VR=20V
at Rated DC Blocking Voltage
@ Tc=125
oC VR=20V
IR
25
50
nA
uA
Typical Reverse Recovery Time(Note 2)
TJ=25
oC
Trr
5.0
nS
Typical Junction Capacitance (Note 1)
Cj
1.65
1.60
pF
Typical Thermal Resistance
RθJA
RθJC
190
80
150
60
oC/W
Power Dissipation
PD
500
mW
Operating Junction Temperature Range
TJ
-65 to + 200
oC
Storage Temperature Range
TSTG
-65 to + 200
oC
Notes:
1. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Recover to 0.25A.
1  2 



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