IXTT140N10P datasheet(1/5 Pages) IXYS

Part #	IXTT140N10P

Description	PolarHT?? Power MOSFET

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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Symbol

Test Conditions

Characteristic Values

(T

J = 25° C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 250 µA

100

V

GS(th)

V

DS = VGS, ID = 250µA

3.0

5.0

V

I

GSS

V

GS = ±20 VDC, VDS = 0

±100

nA

I

DSS

V

DS = VDSS

25

µA

V

GS = 0 V

T

J = 175° C

500

µA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

11

m

Ω

V

GS = 15 V, ID = 300 A

9

m

Ω

Pulse test, t

≤300 µs, duty cycle d ≤ 2 %

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

° C to 175° C

100

V

DGR

T

J

= 25

° C to 175° C; R

GS = 1 MΩ

100

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25° C

140

A

I

D(RMS)

External lead current limit

75

A

I

DM

T

C = 25° C, pulse width limited by TJM

300

A

I

AR

T

C = 25° C60

A

E

AR

T

C = 25° C80

mJ

E

AS

T

C = 25° C

2.5

J

dv/dt

I

S

≤I

DM, di/dt ≤100 A/µs, VDD ≤VDSS,

10

V/ns

T

J

≤150° C, R

G = 4 Ω

P

D

T

C = 25° C

600

W

T

J

-55 ... +175

°C

T

JM

175

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

T

SOLD

Plastic body for 10 s

260

° C

M

d

Mounting torque

(TO-3P)

1.13/10 Nm/lb.in.

Weight

TO-3P

5.5

g

TO-268

5.0

g

G = Gate

D = Drain

S = Source

TAB = Drain

DS99133E(12/05)

PolarHTTM

Power MOSFET

IXTQ 140N10P

V

DSS

=

100 V

IXTT 140N10P

I

D25

=

140 A

R

DS(on) ≤

≤≤≤≤

11

m

Ω

N-Channel Enhancement Mode

Avalanche Rated

Features

l International standard packages

l Unclamped Inductive Switching (UIS)

rated

l Low package inductance

- easy to drive and to protect

Advantages

l

Easy to mount

l

Space savings

l

High power density

TO-3P (IXTQ)

G

D

S

(TAB)

TO-268 (IXTT)

G

S

D (TAB)

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