Electronic Components Datasheet Search |
|
MR2920 Datasheet(PDF) 3 Page - Shindengen Electric Mfg.Co.Ltd |
|
MR2920 Datasheet(HTML) 3 Page - Shindengen Electric Mfg.Co.Ltd |
3 / 7 page P.03 All Rights Reserved Copyright (C) SHINDENGEN ELECTRIC MANUFACTURING CO., LTD. 2002 Password Vol.02-06-e MR2000 Series 2-3 Equivalent Circuit and Appearance 3-1 Main Switching Device - High-speed IGBT (MR2900 Series) The unique (patented) structure of the Shindengen high-speed IGBT provides both high-speed switching and low saturation voltage in a single device, thus also permitting its use in switching power supplies. This newly developed high-speed IGBT is positioned between the MOSFET and the bipolar transistor (Fig.3). Fig.4 shows a comparison of losses in the 900V resistant switching device in the worldwide partial resonance power supply. The loss curve is comparatively flat in relation to the wide range of input voltage, and as such the device is optimized for use with a variety of international input voltages. 3 Features Fig.3 Comparison of Switching Devices Fig.1 Equivalent Circuit Fig.2 Appearance 5 4 3 2 1 6 7 Q1 GND Z/C F/B Vin Vcc Source/Emitter Drain/Collector IC1 MOSFET High-speed IGBT IGBT BJT Device Symbol Drive Voltage Voltage Voltage Current ON loss Small Small Large Large Switching loss |
Similar Part No. - MR2920 |
|
Similar Description - MR2920 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |