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THN6201S Datasheet(PDF) 1 Page - AUK corp |
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THN6201S Datasheet(HTML) 1 Page - AUK corp |
1 / 13 page THN6201 Series SiGe NPN Transistor □ Applications LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA o High Power Gain MAG = 18.5 dB at f = 1 GHz, VCE = 3 V, IC = 15 mA MAG = 13 dB at f = 1 GHz, VCE = 3 V, IC = 15 mA o High Transition Frequency fT = 12 GHz at VCE = 3 V, IC = 15 mA Pin Configuration Pin No 1 2 3 □ h FE Classification □ Available Package Product THN6201S THN6201U THN6201Z THN6201E □ Absolute Maximum Ratings THN6201KF Caution : ESD sensitive device Parameter Symbol VCBO Collector to Base Breakdown Voltage VCEO VEBO Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage IC PT TSTG Operating Junction Temperature Storage Temperature TJ -65 ~ 150 150 ℃ Collector Current (DC) 35 AC1 AC2 Marking hFE Value 125 to 300 80 to 160 Total Power Dissipation ℃ 150 Unit Symbol SOT-343 2.0ⅹ1.25, 1.0t SOT-523 1.6ⅹ0.8, 0.8t SOT-23 B Description Emitter Base Ratings E 1.4ⅹ0.8, 0.6t Unit : mm 2.9ⅹ1.3, 1.2t SOT-323 2.0ⅹ1.25, 1.0t 12 Collector C SOT-623F V V 20 Package Dimension V 2.5 mA mW SOT-523 Unit in mm Semiconductor 1 |
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