THN5702F datasheet(2/8 Pages) AUK

Part #	THN5702F

Description	SiGe NPN Transistor

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Manufacturer	AUK [AUK corp]

Direct Link	https:www.auk.co.kr

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2

□ Electrical Characteristics (T

A = 25 ℃)

dBm

-

29

27

VCE = 3.6 V, IC = 30 mA(RF off),

f = 460 MHz, PIN=15dBm

POUT

Output Power

dBm

-

30

28

VCE = 4.5 V, IC = 50 mA(RF off),

f = 460 MHz, PIN=15dBm

dBm

-

31

29

VCE = 6.0 V, IC = 30 mA(RF off),

f = 460 MHz, PIN=15dBm

dBm

-

25

23

VCE = 3.0 V, IC = 50 mA(RF off),

f = 434 MHz, PIN=10dBm

dB

-

16

14

VCE = 3.0 V, IC = 50 mA(RF off),

f = 434 MHz, PIN=0dBm

dB

-

15

13

VCE = 6.0 V, IC = 30 mA(RF off),

f = 460 MHz, PIN=0dBm

dB

-

15

13

VCE = 4.5 V, IC = 50 mA(RF off),

f = 460 MHz, PIN=0dBm

dB

-

14

12

VCE = 3.6 V, IC = 30 mA(RF off),

f = 460 MHz, PIN=0dBm

GP

Power Gain

300

40

VCE = 4.5 V, IC = 150 mA

hFE

DC Current Gain

㎂

2.5

-

VCB = 13 V, IE = 0 mA

ICBO

Collector Cut-off Current

㎂

1.5

-

VCE = 7 V, IB = 0 mA

ICEO

㎂

1.5

-

VEB = 1.0 V, IC = 0 mA

IEBO

Emitter Cut-off Current

6.5

Typ.

8.0

Max.

pF

-

VCB = 4.5 V, IE = 0 mA, f = 1 MHz

Cre

Reverse Transfer Capacitance

Unit

Min.

Test Conditions

Symbol

Parameter

□ h

FE Classification

170 - 300

40 - 200

hFE Value

PC2

PC1

Marking

□ Thermal Characteristics

K/W

80

Thermal Resistance from Junction to Ambient

Rth j-a

Unit

Value

Parameter

Symbol

THN5702F

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