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AMMP-6425-TR1G Datasheet(PDF) 2 Page - AVAGO TECHNOLOGIES LIMITED |
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AMMP-6425-TR1G Datasheet(HTML) 2 Page - AVAGO TECHNOLOGIES LIMITED |
2 / 11 page 2 Absolute Maximum Ratings [1] Symbol Parameters [1] Units Value Notes Vdd Positive Supply Voltage V 6 2 Vg Gate Supply Voltage V -3 to 0.5 Idq Drain Current mA 700 PD Power Dissipation W 5.5 2, 3 Pin CW Input Power dBm 23 2 Tch,max Maximum Operating Channel Temp. °C +155 4, 5 Tstg Storage Case Temp. °C -65 to +155 Tmax Maximum Assembly Temp (20 sec max) °C +260 Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. 2. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD. 3. When operate at this condition with a base plate temperature of 85°C, the median time to failure (MTTF) is significantly reduced. 4. These ratings apply to each individual FET 5. Junction operating temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. DC Specifications/ Physical Properties [6] Symbol Parameters and Test Conditions Units Value Idq Drain Supply Current (Vdd=5 V, Vg set for Idq Typical) mA 650 Vg Gate Supply Operating Voltage (Id(Q) = 650 (mA)) V -1.1 RθJC Thermal Resistance[6] (Channel-to-Base Plate) °C/W 17.8 Tch Channel Temperature °C 142.8 Notes: 6. Assume SnPb soldering to an evaluation RF board at 85°C base plate temperatures. Worst case is at saturated output power when DC power consumption rises to 5.5W with 1.58W RF power delivered to load. Power dissipation is 3.92W and the temperature rise in the channel is 69.8 °C. In this condition, the channel temperature reached at the maximum operational channel temperature of 155°C. To maintain the maximum operational temperature below 155°C, the base plate temperature must be maintained below 85°C AMMP-6425 RF Specifications [1, 2, 3, 4] (Data obtained from 2.4-mm connector based test fixture, and this data is including connecter loss, and board loss.) TA= 25°C, Vdd = 5.0 V, Idq =650 mA, Vg = -1.1V, Zo=50Ω Symbol Parameters and Test Conditions Units Minimum Typical Maximum Freq Operational Frequency GHz 18 28 Gain Small-signal Gain[3, 4] Freq (GHz) = 18, 23 Freq (GHz) = 28 dB dB 21 20 23 22 P-1dB Output Power at 1dB[3] Gain Compression Freq (GHz) = 18 Freq (GHz) = 23, 28 dBm dBm 26 27 28 28 OIP3 Output Third Order Intercept Point dBm 35 RLin Input Return Loss dB 10 RLout Output Return Loss dB 10 Isolation Reverse Isolation dB 43 Notes: 1. Small/Large -signal data measured in packaged form on a 2.4mm connecter based evaluation board at TA = 25°C. 2. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies 3. Specifications are derived from measurements in a 50Ω test environment. Aspects of the amplifier performance may be improved over a narrower bandwidth by application of additional conjugate, linearity, or power matching. 4. Pre-assembly into package performance verified 100% on-wafer published specifications at Frequencies=18, 23, and 28GHz. 5. The Gain and P1dB tested at 18, 23 and 28 GHz guaranteed with measurement accuracy ±1.5dB for Gain and P1dB, except Gain at 18 GHz with measurement accuracy ±1.8dB. |
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