2

RF Device Data

Freescale Semiconductor

MRF7S19170HR3 MRF7S19170HSR3

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

1A (Minimum)

Machine Model (per EIA/JESD22-A115)

B (Minimum)

Charge Device Model (per JESD22-C101)

IV (Minimum)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

—

10

μAdc

Zero Gate Voltage Drain Leakage Current

—

—

1

μAdc

Gate-Source Leakage Current

—

—

1

μAdc

On Characteristics

Gate Threshold Voltage

1.2

2

2.7

Vdc

Gate Quiescent Voltage

—

2.7

—

Vdc

4

5.4

7.6

Vdc

Drain-Source On-Voltage

0.1

0.15

0.3

Vdc

Reverse Transfer Capacitance

—

0.9

—

pF

Output Capacitance

—

703

—

pF

1987.5 MHz, Single-Carrier W-CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF.

ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

Power Gain

16

17.2

19

dB

Drain Efficiency

29

32

—

%

Output Peak-to-Average Ratio @ 0.01% Probability on CCDF

PAR

5.7

6.2

—

dB

Adjacent Channel Power Ratio

ACPR

—

-37.5

-35

dBc

Input Return Loss

IRL

—

-16

-9

dB

schematic.

2. Part internally matched both on input and output.