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AMMC-5040-W10 Datasheet(PDF) 2 Page - AVAGO TECHNOLOGIES LIMITED |
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AMMC-5040-W10 Datasheet(HTML) 2 Page - AVAGO TECHNOLOGIES LIMITED |
2 / 10 page AMMC-5040 DC Specifications/Physical Properties[1] Symbol Parameters and Test Conditions Units Min. Typ. Max. V D1,2-3-4 Drain Supply Operating Voltage V 2 4.5 5 I D1 First Stage Drain Supply Current (V DD = 4.5 V, VG1 = -0.5 V) mA 50 I D2-3-4 Total Drain Supply Current for Stages 2, 3 and 4 (V DD = 4.5 V, VGG= -0.5 V) mA 225 V G1,2-3-4 Gate Supply Operating Voltages (I DD = 300 mA) V -0.45 V P Pinch-off Voltage (V DD = 4.5 V, IDD < 10 mA) V -1.5 θ ch-b Thermal Resistance[2] (Backside Temp. T b = 25°C) °C/W 49 Notes: 1. Measured in wafer form with T chuck = 25°C (except θ ch-bs.) 2. Channel-to-backside Thermal Resistance ( θ ch-b) = 58°C/W at Tchannel (Tc) = 150°C as measured using the liquid crystal method. Thermal Resistance at backside temperature (T b) = 25°C calculated from measured data. RF Specifications[3,4] (V DD = 4.5V, IDD (Q) = 300 mA, Z0 = 50Ω) Units Broadband Narrow Band Typical Performance GHz 3–40 1–4 7–9 37–40 40–45 Symbol Parameters and Test Conditions Min. Typ. Typical |S 21| 2 Small-signal Gain dB 20 25 25.5 25 22.4 21.3 ∆|S 21| 2 Small-signal Gain Flatness dB ±1.5 ±0.2 ±0.4 ±0.2 ±1.2 RL in Input Return Loss dB 15 17 17 18 21 17 RL out Output Return Loss dB 8 11 10 14 13 13 P -1dB Output Power @ 1 dB Gain Compression dBm 19.5 20 22.5 21 20 f = 22 GHz P -3dB Output Power @ 3 dB Gain Compression, f = 22 GHz dBm 21 21.6 23.5 22.5 21.5 OIP3 Output 3rd Order Intercept Point, dBm 30 29 29 31 27 ∆f = 2 MHz, P in = -8 dBm, f = 22 GHz |S 12| 2 Isolation dB 40 55 55 55 55 55 Notes: 3. Data measured in wafer form, T chuck = 25°C. 4. 100% on-wafer RF test is done at frequency = 24, 27, 29, 37 and 40 GHz, except as noted. |
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