Symbol

Parameters and Test Conditions

Units

Min.

Typ.

Max.

V

D1,2-3-4

Drain Supply Operating Voltage

V

2

4.5

5

I

D1

First Stage Drain Supply Current (V

mA

50

I

D2-3-4

Total Drain Supply Current for Stages 2, 3 and 4 (V

mA

225

V

G1,2-3-4

Gate Supply Operating Voltages (I

V

-0.45

V

P

Pinch-off Voltage (V

V

-1.5

θ

ch-b

°C/W

49

Notes:

1. Measured in wafer form with T

2. Channel-to-backside Thermal Resistance (

θ

at backside temperature (T

Units

Broadband

Narrow Band Typical Performance

GHz

3–40

1–4

7–9

37–40

40–45

Symbol

Parameters and Test Conditions

Min.

Typ.

Typical

|S

2

Small-signal Gain

dB

20

25

25.5

25

22.4

21.3

∆|S

2

Small-signal Gain Flatness

dB

±1.5

±0.2

±0.4

±0.2

±1.2

RL

in

Input Return Loss

dB

15

17

17

18

21

17

RL

out

Output Return Loss

dB

8

11

10

14

13

13

P

-1dB

Output Power @ 1 dB Gain Compression

dBm

19.5

20

22.5

21

20

f = 22 GHz

P

-3dB

Output Power @ 3 dB Gain Compression, f = 22 GHz dBm

21

21.6

23.5

22.5

21.5

OIP3

dBm

30

29

29

31

27

∆f = 2 MHz, P

|S

2

Isolation

dB

40

55

55

55

55

55

Notes:

3. Data measured in wafer form, T

4. 100% on-wafer RF test is done at frequency = 24, 27, 29, 37 and 40 GHz, except as noted.