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AP70T03GJ Datasheet(PDF) 2 Page - Advanced Power Electronics Corp. |
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AP70T03GJ Datasheet(HTML) 2 Page - Advanced Power Electronics Corp. |
2 / 4 page Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V ΔBV DSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.03 - V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=33A - - 9 mΩ VGS=4.5V, ID=20A - - 18 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs VDS=10V, ID=33A - 35 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=175 oC) VDS=24V ,VGS=0V - - 250 uA IGSS Gate-Source Leakage VGS= ±20V - - ±100 nA Qg Total Gate Charge 2 ID=33A - 17 27 nC Qgs Gate-Source Charge VDS=20V - 5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 10 - nC Qoss Output Charge VDD=15V,VGS=0V - 13.5 22 nC td(on) Turn-on Delay Time 2 VDS=15V - 8 - ns tr Rise Time ID=33A - 105 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 22 - ns tf Fall Time RD=0.45Ω -9 - ns Ciss Input Capacitance VGS=0V - 1485 2400 pF Coss Output Capacitance VDS=25V - 245 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 170 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage 2 IS=33A, VGS=0V - - 1.3 V trr Reverse Recovery Time IS=20A, VGS=0V, - 27 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 20 - nC Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 2/4 AP70T0G3H/J |
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