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FGFP30N30DTU Datasheet(PDF) 5 Page - Fairchild Semiconductor

Part # FGFP30N30DTU
Description  300V, 30A PDP IGBT
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FGFP30N30DTU Datasheet(HTML) 5 Page - Fairchild Semiconductor

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FGPF30N30D Rev. A
Typical Performance Characteristics (Continued)
Figure 7. Saturation Voltage vs.VGE
Figure 8. Capacitance Characteristics
Figure 9. Gate Charge Characteristics
Figure 10. SOA Characteristics
Figure 11. Turn-On Characteristics vs.
Figure 12. Turn Off Characteristics vs.
Gate Resistance
Gate Resistance
0
5
10
15
20
25
30
10
100
1000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25
o
C
C
res
C
oes
C
ies
Collector-Emitter Voltage, VCE [V]
2500
04
8
12
16
20
0
4
8
12
16
20
IC = 10A
20A
30A
Common Emitter
T
C
= 125
o
C
Gate-Emitter Voltage, VGE [V]
0
8
16
24
32
40
0
3
6
9
12
15
Common Emitter
RL = 10Ω
TC = 25
o
C
200V
V
cc = 100V
Gate Charge, Qg [nC]
0.1
1
10
100
1000
0.01
0.1
1
10
100
50us
100us
1ms
DC Operation
Single Nonrepetitive
Pulse Tc=25
oC
Curves must be derated
linearly with increase
in temperature
Collector-Emitter Voltage, V
CE [V]
200
0
10
20304050
6070
10
100
1000
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
TC = 25
o
C
TC = 125
o
C
t
d(off)
t
f
Gate Resistance, RG [Ω ]
0
20406080
100
1
10
100
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
TC = 25
o
C
TC = 125
o
C
td(on)
t
r
Gate Resistance, RG [Ω]


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