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IRFI530NPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFI530NPBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 9 page IRFI530NPbF Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.12 V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance 0.11 Ω VGS = 10V, ID = 6.6A VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 6.4 S VDS = 50V, ID = 9.0A 25 VDS = 100V, VGS = 0V 250 VDS = 80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage 100 VGS = 20V Gate-to-Source Reverse Leakage -100 VGS = -20V Qg Total Gate Charge 44 ID = 9.0A Qgs Gate-to-Source Charge 6.2nC VDS = 80V Qgd Gate-to-Drain ("Miller") Charge 21 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time 6.4 VDD = 50V tr Rise Time 27 ID = 9.0A td(off) Turn-Off Delay Time 37 RG = 12Ω tf Fall Time 25 RD = 5.5Ω, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance 640 VGS = 0V Coss Output Capacitance 160 VDS = 25V Crss Reverse Transfer Capacitance 88 = 1.0MHz, See Fig. 5 C Drain to Sink Capacitance 12 = 1.0MHz Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage 1.3 V TJ = 25°C, IS = 6.6A, VGS = 0V trr Reverse Recovery Time 130 190 ns TJ = 25°C, IF = 9.0A Qrr Reverse Recovery Charge 650 970 nC di/dt = 100A/µs nH µA nA IDSS Drain-to-Source Leakage Current IGSS ns S D G 4.5 7.5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance pF Source-Drain Ratings and Characteristics A 60 12 S D G Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 15V, starting TJ = 25°C, L = 3.1mH RG = 25Ω, IAS = 9.0A. (See Figure 12)
t=60s, =60Hz ISD ≤ 9.0A, di/dt ≤ 520A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Uses IRF530N data and test conditions Pulse width ≤ 300µs; duty cycle ≤ 2%. LS Internal Source Inductance |
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