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IRGR3B60KD2PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRGR3B60KD2PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 14 page  IRGR3B60KD2PbF 2 www.irf.com V CC = 80% (VCES), VGE = 15V, L = 100µH, RG = 100Ω. When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994. Energy losses include "tail" and diode reverse recovery. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig. V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ——V VGE = 0V, IC = 500µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —0.32 — V/°C VGE = 0V, IC = 1mA (25°C-150°C) VCE(on) Collector-to-Emitter Voltage — 1.9 2.4 IC = 3.0A, VGE = 15V 5,6,7 —2.2 2.6 V IC = 3.0A, VGE = 15V, TJ = 150°C 9,10,11 VGE(th) Gate Threshold Voltage 3.5 4.5 5.5 VCE = VGE, IC = 250µA 9,10,11 ∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -8.5 — mV/°C VCE = VGE, IC = 1mA (25°C-150°C) 12 gfe Forward Transconductance — 1.9 — S VCE = 50V, IC = 3.0A, PW = 80µs ICES Zero Gate Voltage Collector Current — 1.0 150 µA VGE = 0V, VCE = 600V — 200 500 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop — 1.5 1.8 V IF = 3.0A, VGE = 0V 8 —1.5 1.8 IF = 3.0A, VGE = 0V, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V, VCE = 0V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig. Qg Total Gate Charge (turn-on) — 13 20 IC = 3.0A 23 Qge Gate-to-Emitter Charge (turn-on) — 1.5 2.3 nC VCC = 400V CT1 Qgc Gate-to-Collector Charge (turn-on) — 6.6 9.9 VGE = 15V Eon Turn-On Switching Loss — 62 75 IC = 3.0A, VCC = 400V CT4 Eoff Turn-Off Switching Loss — 39 50 µJ VGE = 15V, RG = 100Ω, L = 2.5mH Etot Total Switching Loss — 100 120 TJ = 25°C e td(on) Turn-On delay time — 18 22 IC = 3.0A, VCC = 400V tr Rise time — 15 21 ns VGE = 15V, RG = 100Ω, L = 2.5mH CT4 td(off) Turn-Off delay time — 110 120 TJ = 25°C tf Fall time — 68 80 Eon Turn-On Switching Loss — 91 100 IC = 3.0A, VCC = 400V CT4 Eoff Turn-Off Switching Loss — 98 140 µJ VGE = 15V, RG = 100Ω, L = 2.5mH 13,15 Etot Total Switching Loss — 190 230 TJ = 150°C e WF1,WF2 td(on) Turn-On delay time — 18 22 IC = 3.0A, VCC = 400V 14,16 tr Rise time — 17 22 ns VGE = 15V, RG = 100Ω, L = 2.5mH CT4 td(off) Turn-Off delay time — 120 140 TJ = 150°C WF1 tf Fall time — 91 105 WF2 Cies Input Capacitance — 190 — VGE = 0V Coes Output Capacitance — 23 — pF VCC = 30V 22 Cres Reverse Transfer Capacitance — 6.6 — f = 1.0MHz RBSOA Reverse Bias Safe Operating Area FULL SQUARE TJ = 150°C, IC = 15.6A, Vp = 600V 4 VCC=500V,VGE=+15V to 0V,RG = 100Ω CT2 SCSOA Short Circuit Safe Operating Area 10 — — µs TJ = 150°C, Vp = 600V, RG = 100Ω CT3 VCC=360V,VGE = +15V to 0V WF4 Erec Reverse Recovery Energy of the Diode — 38 44 µJ TJ = 150°C 17,18,19 trr Diode Reverse Recovery Time — 77 84 ns VCC = 400V, IF = 3.0A, L = 2.5mH 20,21 Irr Diode Peak Reverse Recovery Current — 4.8 5.3 A VGE = 15V, RG = 100Ω CT4,WF3 |
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