P0903BSG datasheet(1/5 Pages) ETC2

Part #	P0903BSG

Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor

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1

Jun-29-2004

N-Channel Logic Level Enhancement

Mode Field Effect Transistor

P0903BSG

TO-263 (D2PAK)

Lead-Free

NIKO-SEM

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Gate-Source Voltage

VGS

±20

V

TC = 25 °C

50

Continuous Drain Current

TC = 100 °C

ID

35

Pulsed Drain Current

1

IDM

200

Avalanche Current

IAR

40

A

Avalanche Energy

L = 0.1mH

EAS

250

Repetitive Avalanche Energy

2

L = 0.05mH

EAR

8.6

mJ

TC = 25 °C

50

Power Dissipation

TC = 100 °C

PD

30

W

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

Lead Temperature (

1/

16” from case for 10 sec.)

TL

275

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Case

RθJC

2.5

Junction-to-Ambient

RθJA

62.5

Case-to-Heatsink

RθCS

0.6

°C / W

1Pulse width limited by maximum junction temperature.

2Duty cycle ≤ 1％

ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)

LIMITS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX

UNIT

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250µA

25

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250µA

1

1.6

3

V

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±250

nA

VDS = 20V, VGS = 0V

25

Zero Gate Voltage Drain Current

IDSS

VDS = 20V, VGS = 0V, TC = 125 °C

250

µA

1. GATE

2. DRAIN

3. SOURCE

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

25

9.5mΩ

50A

G

D

S

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