IRG4PC50UPBF datasheet(5/9 Pages) IRF

Part #	IRG4PC50UPBF

Description	INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

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Manufacturer	IRF [International Rectifier]

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IRG4PC50UPbF

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5

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

0

2000

4000

6000

8000

1

1 0

100

CE

V

, C o llector-to -E m itte r V o ltag e (V )

A

V

= 0V ,

f = 1M H z

C

= C

+ C

, C

S H O R T E D

C

= C

C

= C

+ C

C ie s

Cres

C oes

GE

ies

g e

g c

c e

res

gc

o es

c e

g c

0

4

8

12

16

20

0

4 0

8 0

120

160

200

g

Q , Total Gate Charge (nC)

A

V

= 400V

I

= 27A

CE

C

0.1

1

10

-60

-40

-20

0

2 0

4 0

6 0

8 0

100 120 140 160

A

T , Jun ction Tem perature (°C )

J

I = 5 4A

I = 2 7A

I = 1 4 A

R

= 5 .0

Ω

V

= 1 5V

V

= 4 80 V

C

G

GE

CC

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

0

1 02 0

3 04 05 06 0

G

R , Gate Resistance ( Ω)

A

V

= 480V

V

= 15V

T

= 25°C

I

= 27A

CC

GE

J

C

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IRG4PC50UPBF Datasheet(PDF) 5 Page - International Rectifier

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