IRLR/U014NPbF

S

D

G

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

5.3

Case-to-Ambient (PCB mount)**

–––

50

°C/W

Junction-to-Ambient

–––

110

Thermal Resistance

Description

12/06/04

www.irf.com

1

D-Pak

TO-252AA

I-Pak

TO-251AA

Fifth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve the lowest possible on-resistance per

silicon area. This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs are well known for,

provides the designer with an extremely efficient device for use in a wide

variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or

wave soldering techniques. The straight lead version (IRFU series) is for

through-hole mounting applications. Power dissipation levels up to 1.5 watts

are possible in typical surface mount applications.

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .

For recommended footprint and soldering techniques refer to application note #AN-994

Parameter

Max.

Units

10

7.1

A

Pulsed Drain Current



40

Power Dissipation

28

W

Linear Derating Factor

0.2

W/°C

Gate-to-Source Voltage

± 16

V

Single Pulse Avalanche Energy

‚

35

mJ

Avalanche Current



6.0

A

Repetitive Avalanche Energy



2.8

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

5.0

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Absolute Maximum Ratings

PD - 95551A