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PS21204 Datasheet(PDF) 8 Page - Mitsubishi Electric Semiconductor

Part # PS21204
Description  TRANSFER-MOLD TYPE INSULATED TYPE
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

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MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21204
TRANSFER-MOLD TYPE
INSULATED TYPE
Aug. 1999
Fig. 8 TYPICAL DIP-IPM APPLICATION CIRCUIT EXAMPLE
Note 1 : To prevent the input signals oscillation, an RC coupling at each input is recommended, and the wiring of each input should be as short
as possible. (Less than 2cm)
2: By virtue of integrating an application specific type HVIC inside the module, direct coupling to CPU terminals without any opto-coupler
or transformer isolation is possible.
3: FO output is open collector type. This signal line should be pulled up to the positive side of the 5V power supply with approximately
5.1k
Ω resistance.
4: FO output pulse width should be decided by connecting an external capacitor between CFO and VNC terminals (CFO). (Example : CFO
= 22 nF
→ tFO = 1.8 ms (typ.))
5: Each input signal line should be pulled up to the 5V power supply with approximately 4.7k
Ω resistance (other RC coupling circuits at
each input may be needed depending on the PWM control scheme used and on the wiring impedances of the system’s printed circuit
board). Approximately a 0.22~2
µF by-pass capacitor should be used across each power supply connection terminals.
6: To prevent errors of the protection function, the wiring of A, B, C should be as short as possible.
7: In the recommended protection circuit, please select the R1C5 time constant in the range 1.5~2
µs.
8: Each capacitor should be put as nearby the pins of the DIP-IPM as possible.
9: To prevent surge destruction, the wiring between the smoothing capacitor and the P&N1 pins should be as short as possible. Approxi-
mately a 0.1~0.22
µF snubber capacitor between the P&N1 pins is recommended.
HO
HO
DIP-IPM
C1: Tight to lerance temp-compensated electrolytic type; C2,C3: 0.22~2
µ F R-category ceramic capacitor for noise filtering
(Note : The capacitance value depends on the PWM control used in the applied system)
C3
C3
C3
C3
C2
C2
C2
C1
C1
C1
HO
IN
IN
15V line
5V line
5V line
IN
COM
COM
COM
UOUT
VOUT
WOUT
VNO
CFO
GND
F
o
WN
VN
VCC
C
B
A
C4(CFO)
CFO
R1
C5
Shunt
Resistor
CIN
CIN
N1
N
W
V
U
P
VS
VS
VS
VB
VB
VB
VCC
VCC
VCC
Fo
WN
VN
UN
UN
WP
VP
UP
VNC
VN1
VPC
VP1
VP1
VP1
VWFS
VVFS
VUFS
VWFB
VVFB
VUFB
M
RSh
For detailed description of the boot-strap circuit
construction, please contact Mitsubishi Electric
C
P
U
U
N
I
T


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