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AR609S06 Datasheet(PDF) 4 Page - Power Semiconductors |
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AR609S06 Datasheet(HTML) 4 Page - Power Semiconductors |
4 / 4 page AR609 RECTIFIER DIODE FINAL SPECIFICATION ago 02 - ISSUE : 03 Distributed by FORWARD CHARACTERISTIC Tj = 190 °C 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 0.6 0.8 1 1.2 1.4 Forward Voltage [V] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 0.0 5.0 10.0 15.0 20.0 25.0 0.001 0.01 0.1 1 10 100 t[s] SURGE CHARACTERISTIC Tj = 190 °C 0 10 20 30 40 50 60 1 10 100 n° cycles All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO |
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