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BAV103 Datasheet(PDF) 1 Page - Diotec Semiconductor |
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BAV103 Datasheet(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page BAV100 ... BAV103 BAV100 ... BAV103 Superfast Switching Surface Mount Si-Diodes Superschnelle Si-Dioden für die Oberflächenmontage Version 2005-08-15 Dimensions - Maße [mm] Max. power dissipation – Max. Verlustleistung 500 mW Repetitive peak reverse voltage Periodische Spitzensperrspannung 50...300 V Plastic case MiniMELF Kunststoffgehäuse MiniMELF DO-213AA Weight approx.– Gewicht ca. 0.04 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Marking: One green ring denotes “cathode” and “superfast switching diode” The type numbers are noted only on the lable on the reel Kennzeichnung: Ein grüner Ring kennzeichnet “Katode” und “superschnelle Diode” Die Typenbezeichnungen sind nur auf dem Rollenaufkleber vermerkt Maximum ratings Grenzwerte Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 1) BAV100 50 60 BAV101 100 120 BAV102 200 200 BAV103 300 300 Max. power dissipation Max. Verlustleistung TA = 75°C Ptot 500 mW 2) Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TA = 75°C IFAV 200 mA 2) Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 650 mA 2) Peak forward surge current, t ≤ 1 s Stoßstrom, t ≤ 1 s TA = 25°C IFSM 1 A Peak forward surge current, t ≤ 1 µs Stoßstrom, t ≤ 1 µs TA = 25°C IFSM 5 A Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+175°C -50...+175°C 1 Tested with pulses IR = 100 µA, tp = 300 µs, duty cycle ≤ 2% Gemessen mit Impulsen IR = 100 µA, tp = 300 µs, Schaltverhältnis ≤ 2% 2 Mounted on P.C. board with 25 mm2 copper pads at each terminal Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluss © Diotec Semiconductor AG http://www.diotec.com/ 1 |
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