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SDP8405-011 Datasheet(PDF) 2 Page - Honeywell Solid State Electronics Center |
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SDP8405-011 Datasheet(HTML) 2 Page - Honeywell Solid State Electronics Center |
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2 / 4 page  Silicon Phototransistor SDP8405 17 September 1997 ELECTRICAL CHARACTERISTICS UNITS TEST CONDITIONS MIN PARAMETER SYMBOL TYP MAX SCHEMATIC ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Power Dissipation 70 mW [À] Operating Temperature Range -40¡C to 85¡C Storage Temperature Range -40¡C to 85¡C Soldering Temperature (5 sec) 240¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.18 mW/¡C. Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h © Honeywell Inc. |
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