MG150J2YS50

2001-02-22 2/5

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

―

―

±500

nA

Collector cut-off current

―

―

2.0

mA

Gate-emitter cut-off voltage

5.0

7.0

8.0

V

Collector-emitter saturation voltage

―

2.10

2.70

V

Input capacitance

―

14200

―

pF

Turn-on delay time

―

0.15

0.30

Rise time

―

0.15

0.30

Turn-on time

―

0.50

1.00

Turn-off delay time

―

0.20

0.40

Fall time

―

0.15

0.30

Switching time

Turn-off time

Inductive load

(Note 1)

―

0.50

1.00

µs

Forward voltage

―

2.30

3.00

V

Reverse recovery time

di / dt = 200A / µs

―

0.08

0.15

µs

Transistor stage

―

―

0.16

Thermal resistance

Diode stage

―

―

0.35

°C / W

Note 1: Switching time test circuit & timing chart

· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by

TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its

use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or

others.

· The information contained herein is subject to change without notice.

000707EAA2