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ARF462 Datasheet(PDF) 1 Page - Power Semiconductors |
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ARF462 Datasheet(HTML) 1 Page - Power Semiconductors |
1 / 2 page FAST RECOVERY DIODE ARF462 FOR IGBT,IEGT,GCT APPLICATIONS Repetitive voltage up to 4500 V SNUBBERLESS OPERATION Mean forward current 435 A LOW LOSSES SOFT RECOVERY Surge current 10 kA TARGET SPECIFICATION giu 00 - ISSUE : 02 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 125 4500 V V RSM Non-repetitive peak reverse voltage 125 4600 V I RRM Repetitive peak reverse current V=VRRM 125 50 mA V DC LINK Permanent DC voltage 125 2500 V CONDUCTING I F (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 435 A I F (AV) Mean forward current 180° square,50 Hz,Th=55°C,double side cooled 440 A I FSM Surge forward current Sine wave, 10 ms 125 10 kA I² t I² t reapplied reverse voltage up to 50% VRSM 500 x1E3 A²s V FM Forward voltage Forward current = 1800 A 25 5.22 V V F(TO) Threshold voltage 125 2.70 V r F Forward slope resistance 125 1.400 mohm SWITCHING Q rr Reverse recovery charge I F = 1000 A di/dt= 250 A/µs 125 µC I rr Peak reverse recovery current VR = 100 V 125 A t rr Reverse recovery time I F = 1000 A µs Q rr Reverse recovery charge di/dt= 1000 A/µs µC I rr Peak reverse recovery current VR = 1800 V 125 A s Softness (s-factor), min E OFF Turn off energy dissipation J V FR Peak forward recovery di/dt= 400 A/µs 125 38 V MOUNTING R th(j-h) Thermal impedance Junction to heatsink, double side cooled 37 °C/kW R th(c-h) Thermal impedance Case to heatsink, double side cooled 10 °C/kW T j Operating junction temperature -30 / 125 °C F Mounting force 11.8 / 13.2 kN Mass 300 g ORDERING INFORMATION : ARF462 S 45 standard specification VRRM/100 500 360 1150 900 POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 |
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