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M12L2561616A-7TG Datasheet(PDF) 4 Page - Elite Semiconductor Memory Technology Inc. |
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M12L2561616A-7TG Datasheet(HTML) 4 Page - Elite Semiconductor Memory Technology Inc. |
4 / 44 page ESMT M12L2561616A Elite Semiconductor Memory Technology Inc. Publication Date: Aug. 2007 Revision: 1.2 4/44 DC CHARACTERISTICS Recommended operating condition unless otherwise noted,TA = 0 to 70 C ° Version Parameter Symbol Test Condition CAS Latency -6 -7 Unit Note Operating Current (One Bank Active) ICC1 Burst Length = 2, tRC = tRC(min), IOL = 0 mA 170 150 mA 1,2 ICC2P CKE = VIL(max), tcc = 10ns 4 Precharge Standby Current in power-down mode ICC2PS CKE & CLK=VIL (max), tCC = ∞ 4 mA ICC2N CKE=VIH(min), CS = VIH(min), tCC = 10ns Input signals are changed one time during 2tck 50 Precharge Standby Current in non power-down mode ICC2NS CKE=VIH(min), CLK=VIL(max), tcc = ∞ input signals are stable 30 mA ICC3P CKE=VIL(max), tCC =10ns 20 Active Standby Current in power-down mode ICC3PS CKE & CLK=VIL(max), tCC = ∞ 20 mA ICC3N CKE=VIH(min), CS =VIH(min), tCC = 10ns Input signals are changed one time during 2tCK 55 mA Active Standby Current in non power-down mode (One Bank Active) ICC3NS CKE=VIH(min), CLK=VIL(max), tCC = ∞ input signals are stable 45 mA Operating Current (Burst Mode) ICC4 IOL = 0 mA, Page Burst, 4 Banks activated, tCCD = 2 CLKs 210 180 mA 1,2 Refresh Current ICC5 tRFC ≥ tRFC(min) 210 180 mA Self Refresh Current ICC6 CKE=0.2V 5 mA Note : 1. Measured with outputs open. 2. Input signals are changed one time during 2 CLKS. |
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