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M13S128168A-5BG Datasheet(PDF) 5 Page - Elite Semiconductor Memory Technology Inc.

Part # M13S128168A-5BG
Description  2M x 16 Bit x 4 Banks Double Data Rate SDRAM
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Manufacturer  ESMT [Elite Semiconductor Memory Technology Inc.]
Direct Link  http://www.esmt.com.tw/index.asp
Logo ESMT - Elite Semiconductor Memory Technology Inc.

M13S128168A-5BG Datasheet(HTML) 5 Page - Elite Semiconductor Memory Technology Inc.

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ESMT
M13S128168A
Elite Semiconductor Memory Technology Inc.
Publication Date : Jun. 2007
Revision : 1.8
5/49
Absolute Maximum Rating
Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VIN, VOUT
-0.5 ~ 3.6
V
Voltage on VDD supply relative to VSS
VDD, VDDQ
-1.0 ~ 3.6
V
Voltage on VDDQ supply relative to VSS
VDDQ
-0.5 ~ 3.6
V
Storage temperature
TSTG
-55 ~ +150
C
°
Power dissipation
PD
TBD
W
Short circuit current
IOS
50
mA
Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC Operation Condition & Specifications
DC Operation Condition
Recommended operating conditions (Voltage reference to VSS = 0V, TA = 0 to 70 C
°)
Parameter
Symbol
Min
Max
Unit
Note
Supply voltage
VDD
2.375
2.75
V
I/O Supply voltage
VDDQ
2.375
2.75
V
I/O Reference voltage
VREF
0.49*VDDQ
0.51*VDDQ
V
1
I/O Termination voltage (system)
VTT
VREF - 0.04
VREF + 0.04
V
2
Input logic high voltage
VIH (DC)
VREF + 0.15
VDDQ + 0.3
V
Input logic low voltage
VIL (DC)
-0.3
VREF - 0.15
V
Input Voltage Level, CLK and CLK inputs
VIN (DC)
-0.3
VDDQ + 0.3
V
Input Differential Voltage, CLK and CLK inputs
VID (DC)
0.36
VDDQ + 0.6
V
Input leakage current
II
-5
5
μ A
3
Output leakage current
IOZ
-5
5
μ A
Output High Current (Normal strength driver)
(VOUT =VDDQ-0.373V, min VREF, min VTT)
IOH
-16.8
mA
Output Low Current (Normal strength driver)
(VOUT = 0.373V)
IOL
+16.8
mA
Output High Current (Weak strength driver)
(VOUT =VDDQ-0.763V, min VREF, min VTT)
IOH
-9
mA
Output Low Current (Weak strength driver)
(VOUT = 0.763V)
IOL
+9
mA
Notes 1.
VREF is expected to be equal to 0.5* VDDQ of the transmitting device, and to track variations in the DC level of the same.
Peak-to-peak noise on VREF may not exceed 2% of the DC value.
2. VTT is not applied directly to the device. VTT is system supply for signal termination resistors, is expected to be set equal
to VREF, and must track variations in the DC level of VREF .
3. VID is the magnitude of the difference between the input level on CLK and the input level on CLK .


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