M13S2561616A datasheet(6/48 Pages) ESMT | 4M x 16 Bit x 4 Banks Double Data Rate SDRAM

6 page

ESMT

M13S2561616A

Elite Semiconductor Memory Technology Inc.

Publication Date : Jul. 2007

Revision : 1.3

6/48

DC Specifications

Version

Parameter

Symbol

Test Condition

-4

-5

-6

Unit Note

Operation Current

(One Bank Active)

IDD0

tRC = tRC (min) tCK = tCK (min)

Active – Precharge

140

130

120

Operation Current

(One Bank Active)

IDD1

Burst Length = 2 tRC = tRC (min), CL=

2.5 IOUT = 0mA,

Active-Read-

Precharge

190

185

165

Precharge Power-down Standby

Current

IDD2P

CKE

≤ V

IL(max),

tCK = tCK (min), All

banks idle

Idle Standby Current

IDD2N

CKE

≥ V

IH(min),

≥ V

IH(min), tCK =

tCK (min)

Active

Power-down

Standby

Current

IDD3P

All banks ACT, CKE

≤ V

IL(max), tCK =

tCK (min)

Active Standby Current

IDD3N

One bank; Active-Precharge, tRC =

tRAS(max),

tCK = tCK (min)

100

Operation Current (Read)

IDD4R

Burst Length = 2, CL= 2.5 , tCK = tCK

(min), IOUT = 0Ma

300

290

250

Operation Current (Write)

IDD4W

Burst Length = 2, CL= 2.5 , tCK = tCK

(min)

300

290

250

Auto Refresh Current

IDD5

tRC ≥ tRFC(min)

300

270

250

Self Refresh Current

IDD6

CKE

≤ 0.2V

Note 1. Enable on-chip refresh and address counters.

AC Operation Conditions & Timing Specification

AC Operation Conditions

Parameter

Symbol

Min

Max

Unit

Note

Input High (Logic 1) Voltage, DQ, DQS and DM signals

VIH(AC)

VREF + 0.31

Input Low (Logic 0) Voltage, DQ, DQS and DM signals

VIL(AC)

VREF - 0.31

Input Different Voltage, CLK and CLK inputs

VID(AC)

0.7

VDDQ+0.6

Input Crossing Point Voltage, CLK and CLK inputs

VIX(AC)

0.5*VDDQ-0.2

0.5*VDDQ+0.2

Note1. VID is the magnitude of the difference between the input level on CLK and the input on CLK .

2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the

same.

Input / Output Capacitance

(VDD = 2.3V~2.7V, VDDQ =2.3V~2.7V, TA = 25 C

° , f = 1MHz)

(VDD = 2.6V~2.8V, VDDQ =2.6V~2.8V, TA = 25 C

° , f = 1MHz (only for speed -4))

Parameter

Symbol

Min

Max

Unit

Input capacitance

(A0~A11, BA0~BA1, CKE, CS , RAS , CAS , WE )

CIN1

2.0

3.0

Input capacitance (CLK, CLK )

CIN2

2.0

3.0

Data & DQS input/output capacitance

COUT

4.0

5.0

Input capacitance (DM)

CIN3

4.0

5.0

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