M52D128168A-10BG datasheet(4/47 Pages) ESMT

Part #	M52D128168A-10BG

Description	2M x 16 Bit x 4 Banks Synchronous DRAM

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Manufacturer	ESMT [Elite Semiconductor Memory Technology Inc.]

Direct Link	http://www.esmt.com.tw/index.asp

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ESMT

Preliminary

M52D128168A

Elite Semiconductor Memory Technology Inc.

Publication Date: May. 2007

Revision: 1.0

4/47

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

VALUE

UNIT

Voltage on any pin relative to VSS

VIN, VOUT

-1.0 ~ 2.6

V

Voltage on VDD supply relative to VSS

VDD, VDDQ

-1.0 ~ 2.6

V

Storage temperature

TSTG

-55 ~ +150

C

°

Power dissipation

PD

1

W

Short circuit current

IOS

50

mA

Note:

Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

DC OPERATING CONDITION

Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70 C

°

)

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

NOTE

Supply voltage

VDD, VDDQ

1.7

1.8

1.9

V

Input logic high voltage

VIH

0.8xVDDQ

1.8

VDDQ+0.3

V

1

Input logic low voltage

VIL

-0.3

0

0.3

V

2

Output logic high voltage

VOH

VDDQ-0.2

-

V

IOH = -0.1mA

Output logic low voltage

VOL

-

0.2

V

IOL = 0.1mA

Input leakage current

IIL

-2

-

2

μ A

3

Output leakage current

IOL

-2

-

2

μ A

4

Note:

1. VIH(max) = 2.2V AC for pulse width

≤ 3ns acceptable.

2. VIL(min) = -1.0V AC for pulse width

≤ 3ns acceptable.

3. Any input 0V

≤ VIN ≤ VDDQ, all other pins are not under test = 0V.

4. Dout is disabled , 0V

≤ VOUT ≤ VDDQ.

CAPACITANCE (V

DD = 1.8V, TA = 25 C

°

, f = 1MHZ)

PARAMETER

SYMBOL

MIN

MAX

UNIT

Input capacitance (A0 ~ A11, BA0 ~ BA1)

CIN1

1.5

3.0

pF

Input capacitance

(CLK, CKE, CS , RAS , CAS , WE &

L(U)DQM)

CIN2

1.5

3.5

pF

Data input/output capacitance (DQ0 ~ DQ15)

COUT

2.0

4.5

pF

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