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CAT6217-180TD-GT3 Datasheet(PDF) 3 Page - Catalyst Semiconductor |
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CAT6217-180TD-GT3 Datasheet(HTML) 3 Page - Catalyst Semiconductor |
3 / 10 page CAT6217 © 2007 Catalyst Semiconductor, Inc. 3 Doc. No. MD-4011 Rev. A Characteristics subject to change without notice ELECTRICAL OPERATING CHARACTERISTICS (1) VIN = VOUT + 1.0V, VEN = High, IOUT = 100μA, CIN = COUT = 1µF, ambient temperature of 25ºC (over recommended operating conditions unless specified otherwise). Bold numbers apply for the entire junction temperature range. Symbol Parameter Conditions Min Typ Max Unit -1.0 +1.0 VOUT-ACC Output Voltage Accuracy Initial accuracy -2.0 +2.0 % TCOUT Output Voltage Temp. Coefficient 40 ppm/ºC -0.2 ±0.1 +0.2 VR-LINE Line Regulation VIN = VOUT + 1.0V to 5.5V -0.4 +0.4 %/V 0.6 1.0 VR-LOAD Load Regulation IOUT = 100μA to 150 mA 1.3 % 90 125 VDROP Dropout Voltage (2) IOUT = 150mA 150 mV 55 75 IOUT = 0μA 90 IGND Ground Current IOUT = 150mA 80 μA 1 IGND-SD Shutdown Ground Current VEN < 0.4V 2 μA f = 1kHz, CBYP = 10nF 64 PSRR Power Supply Rejection Ratio f = 20kHz, CBYP = 10nF 54 dB ISC Output short circuit current limit VOUT = 0V 350 mA TON Turn-On Time CBYP = 10nF 150 μs eN Output Noise Voltage (3) BW = 10Hz to 100kHz 45 μVrms ROUT-SH Shutdown Switch Resistance 250 Ω REN Enable pull-down resistor 2.5 MΩ VUVLO Under-voltage lock out (UVLO) threshold 2.1 V ESR COUT equivalent series resistance 5 500 mΩ Enable Input VHI Logic High Level VIN = 2.3 to 5.5V 1.8 V VLO Logic Low Level VIN = 2.3 to 5.5V 0.4 V VEN = 0.4V 0.15 1 IEN Enable Input Current VEN = VIN 1.5 4 μA Thermal Protection TSD Thermal Shutdown 160 ºC THYS Thermal Hysteresis 10 ºC Notes: (1 Specification for 2.85V output version unless specified otherwise. (2) Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value measured at 1V differential. During test, the input voltage stays always above the minimum 2.3V. (3) Specification for 1.8V output version. |
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