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MMBT2222 Datasheet(PDF) 2 Page - Diotec Semiconductor |
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MMBT2222 Datasheet(HTML) 2 Page - Diotec Semiconductor |
2 / 2 page MMBT2222 / MMBT2222A Min. Typ. Max. Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) IC = 150 mA, IB = 15 mA MMBT2222 MMBT2222A VCEsat VCEsat – – – – 0.4 V 0.3 V IC = 500 mA, IB = 50 mA MMBT2222 MMBT2222A VCEsat VCEsat – – – – 1.6 V 1.0 V Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) IC = 150 mA, IB = 15 mA MMBT2222 MMBT2222A VBEsat VBEsat – 0.65 V – – 1.3 V 1.2 V IC = 500 mA, IB = 50 mA MMBT2222 MMBT2222A VBEsat VBEsat – – – – 2.6 V 2.0 V Collector-Base cutoff current – Kollektor-Basis-Reststrom VCB = 50 V, (E open) VCB = 60 V, (E open) MMBT2222 MMBT2222A ICBO ICBO – – – – 10 nA 10 nA VCB = 50 V, Tj = 125°C, (E open) VCB = 60 V, Tj = 125°C, (E open) MMBT2222 MMBT2222A ICBO ICBO – – – – 10 µA 10 µA Emitter-Base cutoff current – Emitter-Basis-Reststrom VEB = 3 V, (C open) MMBT2222A IEB0 – –- 100 nA Gain-Bandwidth Product – Transitfrequenz VCE = 20 V, IC = 20 mA, f = 100 MHz fT 250 MHz – – Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz CCBO –– 8 pF Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEBO – – 25 pf Noise figure – Rauschzahl VCE = 10 V, IC = 100 µA, RG = 1 kΩ, f = 1 kHz MMBT2222A F – – 4 dB Switching times – Schaltzeiten (between 10% and 90% levels) delay time rise time VCC = 3 V, VBE = 0.5 V IC = 150 mA, IB1 = 15mA td – – 10 ns tr – – 25 ns storage time fall time VCC = 3 V, IC = 150 mA, IB1 = IB2 = 15 mA ts – – 225 ns tf – – 60 ns Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 420 K/W 1) Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren MMBT2709 / MMBT2709A Marking - Stempelung MMBT2222 = 1B MMBT2222A = M1P 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 http://www.diotec.com/ © Diotec Semiconductor AG |
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