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MPSA06 Datasheet(PDF) 2 Page - Diotec Semiconductor |
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MPSA06 Datasheet(HTML) 2 Page - Diotec Semiconductor |
2 / 2 page MPSA05 ... MPSA06 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Emitter-Base cutoff current – Emitter-Basis-Reststrom VEB = 4 V, (C open) IEB0 – – 100 nA Gain-Bandwidth Product – Transitfrequenz IC = 10 mA, VCE = 2 V, f = 100 MHz fT 100 MHz – – Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 200 K/W 1) Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren MPSA55, MPSA56 1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden 2 http://www.diotec.com/ © Diotec Semiconductor AG [%] P tot 120 100 80 60 40 20 0 [°C] T A 150 100 50 0 Power dissipation versus ambient temperature ) Verlustleistung in Abh. von d. Umgebungstemp. ) 1 1 |
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