7-165

7

VN0545

VN0550

BV

I

D(ON)

BV

DGS

(max)

(min)

TO-92

450V

60

Ω

150mA

—

VN0545ND

500V

60

Ω

150mA

VN0550N3

VN0550ND

† MIL visual screening available

Order Number / Package

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Package Options

Note: See Package Outline section for dimensions.

N-Channel Enhancement-Mode

Vertical DMOS FETs

High Reliability Devices

See pages 5-4 and 5-5 for MILITARY STANDARD Process

Flows and Ordering Information.

Features

s

s

s

s

s

s

s

s

Applications

s

s

s

s

s

s

memories, displays, bipolar transistors, etc.)

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

± 20V

Operating and Storage Temperature

-55

°C to +150°C

Soldering Temperature*

300

°C

Ordering Information

TO-92

S G D