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DA108S1 Datasheet(PDF) 2 Page - STMicroelectronics |
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DA108S1 Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 8 page Characteristics DA108S1 / DA112S1 2/8 1 Characteristics Note: 1 The surge is repeated after the device returns to ambient temperature 1. Table 1. Absolute maximum ratings (Tamb = 25 °C) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage (for one single diode) 200 V IPP Repetitive peak forward current (see Note 1) 8/20 µs 100 A P Power dissipation 0.73 W Tstg Storage temperature range -55 to + 150 °C Tj Maximum operating junction temperature 150 °C TL Maximum lead temperature for soldering during 10 s. 260 °C Table 2. Thermal resistances Symbol Parameter Value Unit Rth (j-a) Junction to ambient 170 °C/W Table 3. Electrical characteristics(Tamb = 25 °C) Symbol Parameter Max. Unit IR Peak forward voltage IPP = 12 A, 8/20 µS DA108S1 9 V DA112S1 12 VF Forward voltage IF = 50 mA 1.2 V IR Reverse leakage current VR = 15 V 2 µA |
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