TPS2377-1 datasheet(3/22 Pages) TI

Part #	TPS2377-1

Description	IEEE 802.3af PoE HIGH POWER PD CONTROLLER

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Manufacturer	TI [Texas Instruments]

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RECOMMENDED OPERATING CONDITIONS

ELECTRICAL CHARACTERISTICS

TPS2376-H

SLVS646A – SEPTEMBER 2006 – REVISED SEPTEMBER 2006

MIN

MAX

UNIT

Input voltage range

VDD, PG, RTN

0

57

V

Operating current range (sinking)

RTN

0

600

mA

Classification resistor(1)

CLASS

255

4420

Ω

R(ILIM) Inrush limit program resistor (1)

125

1000

k

Ω

Sinking current

PG

0

2

mA

-40

125

IRTN ≤ 400 mA

TJ

Operating junction temperature

°C

400 mA < IRTN ≤ 600 mA(2)

-40

105

TA

Operating free–air temperature

-40

85

°C

(1)

Voltage should not be externally applied to CLASS and ILIM.

(2)

Temperature limitation is for 10 year life-expectancy at this temperature. Short-term operation to 125

°C is permissable.

V

(VDD) = 48 V, R(DET) = 24.9 kΩ, R(CLASS) = 255 Ω, R(ILIM) = 287 kΩ, and –40°C ≤ TJ ≤ 125°C, unless otherwise noted. Positive

currents are into pins. Typical values are at 25

°C. All voltages are with respect to VSS unless otherwise noted.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

DETECTION

DET open, V(VDD) = V(RTN) = 1.9 V, measure

Offset current

0.3

3

µA

I(VDD) + I(RTN)

DET open, V(VDD) = V(RTN) = 10.1 V, measure

Sleep current

4

12

µA

I(VDD) + I(RTN)

DET leakage current

V(DET) = V(VDD) = 57 V, measure I(DET)

0.1

5

µA

V(RTN) = V(VDD),

V(VDD) = 1.4 V

53.7

56

58.3

µA

R(DET) = 24.9 kΩ,

Detection current

measure I(VDD) + I(RTN) +

V(VDD) = 10.1 V

395

410

417

µA

I(DET)

CLASSIFICATION

Measure I(VDD) + I(RTN), 13 V ≤ V(VDD) ≤ 21 V,

V(VDD) = V(RTN)

R(CLASS) = 4420 Ω

2.2

2.4

2.8

R(CLASS) = 953 Ω

10.3

10.6

11.3

I(CLASS)

Classification current(1)

mA

R(CLASS) = 549 Ω

17.7

18.3

19.5

R(CLASS) = 357 Ω

27.1

28

29.5

R(CLASS) = 255 Ω

38

39.4

41.2

Regulator turns on, V(VDD) rising

10.2

11.3

13

V(CL_ON)

Classification lower threshold

V

Hysteresis

1.6

1.8

1.95

V(CU_OFF)

Regulator turns off, V(VDD) rising

21

21.9

23

V

Classification upper threshold

V(CU_H)

Hysteresis

0.5

0.78

1

V

Ilkg

Leakage current

V(CLASS) = 0 V, V(VDD) = 57 V

1

µA

PASS DEVICE

rDS(on)

On resistance

0.58

1

Ω

Leakage current

V(VDD) = V(RTN) = 30 V

15

µA

Current limit

V(RTN) = 1 V

625

765

900

mA

I(LIM)

Inrush limit

V(RTN) = 2 V, R(ILIM) = 178 kΩ

160

224

296

mA

V(RTN) falling, R(ILIM) = 287 kΩ, inrush

Inrush current termination (2)

85%

91%

100%

state

→normal operation

Leakage current, ILIM

V(VDD) = 15 V, V(UVLO) = 0 V

1

µA

(1)

Classification is tested with exact resistor values. A 1% tolerance classification resistor ensures compliance with IEEE 802.3af limits.

(2)

This parameter specifies the RTN current value, as a percentage of the steady state inrush current, below which it must fall to make PG

assert (open-drain).

3

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