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3 page 
3 © 2006 Semtech Corp. www.semtech.com SC250 PRELIMINARY POWER MANAGEMENT Electrical Characteristics (Cont.) Parameter Symbol Conditions Min Typ Max Units Quiescent Current I Q Normal Mode (V DAC < 1V) 1.5 mA Bypass Mode (V DAC > 1.4V) 1 Shutdown Current I SD LX = open, EN = GND, V OUT = open, T A= 25°C 0.1 1 μA VDAC Regulated Output Mode V DAC V IN = 4.2V 0.10 1.20 V VDAC Pass-Through Mode Threshold V DAC PT V DAC Rising 1.28 1.37 V V DAC Falling 1.20 1.3 VDAC to VOUT Transfer Ratio G V 3 V/V R DS ON of Bypass P-Channel FET R PASS I OUT = 100mA, VIN = 3V, VDAC= 1.4V 75 mΩ R DS ON of P-Channel Switching FET R DSP I OUT = 100mA, VIN = 3V 400 mΩ R DS ON of N-Channel Switching FET R DSN I OUT = 100mA, VIN = 3V 250 mΩ LX Leakage Current PMOS I LXP V IN = 3.6V, LX = 0V, EN = GND 2 μA LX Leakage Current NMOS I LXN V IN = 3.6V, LX = 3.6V, EN = GND 2 μA VOUT Pin Bypass PMOS Leakage I LVOUT V IN = 3.6V, VOUT = 0V, EN = GND 2 μA Oscillator Frequency (Fixed Frequency) f OSC V DAC > 0.2V 0.85 1 1.15 MHz Oscillator Frequency (Variable Frequency) f OSCV V DAC = 0.1V 0.65 MHz Logic Input High V IH 1.6 V Logic Input Low V IL 0.6 V Control Input Current - High I IH VDAC/EN =3.6V ±2 μA Control Input Current - Low I IL VDAC/EN = GND ±2 μA Enable Transient Over/Undershoot OS EN 20 % Enable Transient Settling Time t EN-ST 40 μs VDAC Transient Over/Undershoot OS VDAC 20 % VDAC Transient Settling Time t VDAC-ST 40 μs |
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