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2N2857 Datasheet(PDF) 2 Page - Semicoa Semiconductor |
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2N2857 Datasheet(HTML) 2 Page - Semicoa Semiconductor |
2 / 2 page Copyright 2002 Semicoa Semiconductors, Inc. Rev. F 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com 2N2857 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Symbol Test Conditions Min Typ Max Units Collector-Emitter Breakdown Voltage V(BR)CEO IC = 3 mA 15 Volts Collector-Base Cutoff Current ICBO1 VCB = 15 Volts 10 nA Collector-Base Cutoff Current ICBO3 VCB = 30 Volts 1 µA Collector-Base Cutoff Current ICBO2 VCB = 15 Volts, TA = 150°C 1 µA Collector-Emitter Cutoff Current ICES VCE = 16 Volts 100 nA Emitter-Base Cutoff Current IEBO1 VEB = 3 Volts 10 µA On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Parameter Symbol Test Conditions Min Typ Max Units DC Current Gain hFE1 hFE2 IC = 3 mA, VCE = 1 Volts IC = 3 mA, VCE = 1 Volts TA = -55°C 30 10 150 Base-Emitter Saturation Voltage VBEsat IC = 10 mA, IB = 1 mA 1.0 Volts Collector-Emitter Saturation Voltage VCEsat IC = 10 mA, IB = 1 mA 0.4 Volts Dynamic Characteristics Parameter Symbol Test Conditions Min Typ Max Units Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio |hFE| VCE = 6 Volts, IC = 5 mA, f = 100 MHz 10 21 Small Signal Short Circuit Forward Current Transfer Ratio hFE VCE = 6 Volts, IC = 2 mA, f = 1 kHz 50 220 Collector to Base Feedback Capacitance CCB VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz 1 pF Collector Base time constant rb’CC VCB = 6 Volts, IE = 2 mA, f = 31.9 MHz 4 15 ps Small Signal Power Gain Gpe VCE = 6 Volts, IE = 1.5 mA, f = 450 MHz 12.5 21 MHz Noise Figure F VCE = 6 Volts, IC = 1.5 mA, f < 450 MHz, Rg = 50 Ω 4.5 dB |
Similar Part No. - 2N2857_02 |
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Similar Description - 2N2857_02 |
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