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AT29C010A-12JI Datasheet(PDF) 1 Page - ATMEL Corporation |
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AT29C010A-12JI Datasheet(HTML) 1 Page - ATMEL Corporation |
1 / 18 page 1 Features • Fast Read Access Time – 70 ns • 5-volt Only Reprogramming • Sector Program Operation – Single Cycle Reprogram (Erase and Program) – 1024 Sectors (128 Bytes/sector) – Internal Address and Data Latches for 128 Bytes • Two 8K Bytes Boot Blocks with Lockout • Internal Program Control and Timer • Hardware and Software Data Protection • Fast Sector Program Cycle Time – 10 ms • DATA Polling for End of Program Detection • Low Power Dissipation – 50 mA Active Current – 100 µA CMOS Standby Current • Typical Endurance > 10,000 Cycles • Single 5V ± 10% Supply • CMOS and TTL Compatible Inputs and Outputs • Commercial and Industrial Temperature Ranges Description The AT29C010A is a 5-volt-only in-system Flash programmable and erasable read only memory (PEROM). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 275 mW over the commer- cial temperature range. When the device is deselected, the CMOS standby current is 1-Megabit (128K x 8) 5-volt Only Flash Memory AT29C010A Rev. 0394E–FLASH–11/02 Pin Configurations Pin Name Function A0 - A16 Addresses CE Chip Enable OE Output Enable WE Write Enable I/O0 - I/O7 Data Inputs/Outputs NC No Connect TSOP Top View Type 1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A11 A9 A8 A13 A14 NC WE VCC NC A16 A15 A12 A7 A6 A5 A4 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3 PLCC Top View 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 A14 A13 A8 A9 A11 OE A10 CE I/O7 DIP Top View 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND VCC WE NC A14 A13 A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 |
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