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BUJ100B Datasheet(PDF) 4 Page - NXP Semiconductors |
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BUJ100B Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 8 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100B Fig.7. Collector-Emitter saturation voltage. Fig.8. Base-Emitter saturation voltage. Solid Lines = typ values, I C/IB = 3 Solid Lines = typ values, I C/IB = 3 INDUCTIVE SWITCHING Fig.9. Test circuit inductive load. Fig.10. Switching times waveforms with inductive load. V CC = 300 V; -VBE = 5 V, LC = 200 µH; LB = 1 µH Fig.11. Inductive switching. Fig.12. Inductive switching. tfi = f(h FE) tfi = f(I C) 0.01 0.02 0.05 0.1 0.2 0.5 1 2 0 0.2 0.4 0.6 0.8 1 1.2 IC/A VCEsat/V 0.01 0.02 0.05 0.1 0.2 0.5 1 2 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 IC/A VBEsat/V LB IBon -VBB LC T.U.T. VCC IC IB ICon IBon -IBoff t t ts tf toff 10 % 90 % 23 45 67 89 10 11 0 50 100 150 200 HFE GAIN (IC/IB) tfi /ns IC = 1.5A IC = 1A IC = 0.5A 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 50 100 150 200 250 IC/A tfi /ns IC/IB = 10 IC/IB = 5 May 2001 4 Rev 1.000 |
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