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STB20NF06LT4 Datasheet(PDF) 5 Page - STMicroelectronics |
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STB20NF06LT4 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 16 page STB20NF06L - STF20NF06L - STP20NF06L Electrical characteristics 5/16 Table 5. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 30V, ID = 10A RG =4.7Ω VGS = 10V (see Figure 15) 12 30 20 6 ns ns ns ns Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) 20 80 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Forward on voltage ISD = 20A, VGS = 0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 20A, di/dt = 100A/µs, VDD = 20V, Tj = 150°C (see Figure 17) 50 65 3 ns nC A |
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