W39L040A

Publication Release Date: April 14, 2005

- 3 -

Revision A3

1. GENERAL DESCRIPTION

The W39L040A is a 4Mbit, 3V/3.3V CMOS flash memory organized as 512K

× 8 bits. For flexible

erase capability, the 4Mbits of data are divided into 8 uniform sectors of 64 Kbytes. The byte-wide (

×

8) data appears on DQ7

− DQ0. The device can be programmed and erased in-system with a

W39L040A results in fast program/erase operations with extremely low current consumption

(compared to other comparable 3.3-volt flash memory products). The device can also be programmed

and erased by using standard EPROM programmers.

2. FEATURES

•

3V/3.3-Volt Read/Erase/Program Operations

− 3.0 ~ 3.6V for 70nS

− 2.7 ~ 3.6V for 90nS

•

Fast Program operation:

− Byte-by-Byte programming: 9 μS (typ.)

•

Fast Erase operation:

− Chip Erase cycle time: 6 S (typ.)

− Sector Erase cycle time: 0.7 S (typ.)

•

Read access time: 70/90 nS

•

8 Even sectors with 64K bytes

•

Any individual sector can be erased

•

Typical program/erase cycles: 10K

•

Twenty-year data retention

•

Low power consumption

− Active read current: 7 mA at 5MHz (typ.)

− Active program/erase current: 15 mA at

5MHz (typ.)

− Standby current: 0.2 μA (typ.)

•

End of program detection

− Software method: Toggle bit/#Data polling

•

JEDEC standard byte-wide pinouts

•

Available packages: 32-pin PLCC Lead free,

32-pin STSOP (8 x 14 mm) Lead free, 32-pin

PDIP and 32-pin TSOP (8 x 20 mm)