 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
CM100DU-24H Datasheet(PDF) 2 Page - Powerex Power Semiconductors |
|
||||||||||||||||||||||||||||||
CM100DU-24H Datasheet(HTML) 2 Page - Powerex Power Semiconductors |
|
|
2 / 4 page  50 CM100DU-24H Dual IGBTMOD™ U-Series Module 100 Amperes/1200 Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM100DU-24H Units Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts Collector Current (Tc = 25°C) IC 100 Amperes Peak Collector Current ICM 200* Amperes Emitter Current** (Tc = 25°C) IE 100 Amperes Peak Emitter Current** IEM 200* Amperes Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 600 Watts Mounting Torque, M5 Main Terminal – 31 in-lb Mounting Torque, M6 Mounting – 40 in-lb Weight – 310 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 10mA, VCE = 10V 4.5 6 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 100A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts IC = 100A, VGE = 15V, Tj = 125°C – 2.85 – Volts Total Gate Charge QG VCC = 600V, IC = 100A, VGE = 15V – 375 – nC Emitter-Collector Voltage** VEC IE = 100A, VGE = 0V – – 3.2 Volts **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance Cies –– 15 nf Output Capacitance Coes VCE = 10V, VGE = 0V – – 5 nf Reverse Transfer Capacitance Cres –– 3 nf Resistive Turn-on Delay Time td(on) VCC = 600V, IC = 100A, – – 100 ns Load Rise Time tr VGE1 = VGE2 = 15V, – – 200 ns Switch Turn-off Delay Time td(off) RG = 3.1 , Resistive – – 300 ns Times Fall Time tf Load Switching Operation – – 350 ns Diode Reverse Recovery Time** trr IE = 100A, diE/dt = -200A/µs – – 300 ns Diode Reverse Recovery Charge** Qrr IE = 100A, diE/dt = -200A/µs – 0.55 – µC **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module – – 0.19 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module – – 0.35 °C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – 0.035 – °C/W 50 |
Similar Part No. - CM100DU-24H |
|
Similar Description - CM100DU-24H |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
