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2N4029 Datasheet(PDF) 2 Page - Semicoa Semiconductor |
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2N4029 Datasheet(HTML) 2 Page - Semicoa Semiconductor |
2 / 2 page Copyright 2002 Semicoa Semiconductors, Inc. Rev. E 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com 2N4029 Silicon PNP Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Symbol Test Conditions Min Typ Max Units Collector-Base Cutoff Current ICBO1 ICBO2 ICBO3 VCB = 80 Volts VCB = 60 Volts VCB = 60 Volts, TA = 150°C 10 10 25 µA nA µA Collector-Emitter Cutoff Current ICEX VCE = 60 Volts, VEB = 2 Volts 25 nA Emitter-Base Cutoff Current IEBO1 IEBO2 VBE = 5 Volts VBE = 3 Volts 10 25 µA nA On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Parameter Symbol Test Conditions Min Typ Max Units DC Current Gain hFE1 hFE2 hFE3 hFE4 hFE5 IC = 100 µA, VCE = 5 Volts IC = 100 mA, VCE = 5 Volts IC = 500 mA, VCE = 5 Volts IC = 1 A, VCE = 5 Volts IC = 500 mA, VCE = 5 Volts TA = -55°C 50 100 70 25 30 300 Base-Emitter Saturation Voltage VBEsat1 VBEsat2 IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 0.9 1.2 Volts Collector-Emitter Saturation Voltage VCEsat1 VCEsat2 VCEsat3 IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 1 A, IB = 100 mA 0.15 0.50 1.00 Volts Dynamic Characteristics Parameter Symbol Test Conditions Min Typ Max Units Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio |hFE| VCE = 10 Volts, IC = 50 mA, f = 100 MHz 1.5 6.0 Open Circuit Output Capacitance COBO VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz 20 pF Open Circuit Input Capacitance CIBO VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz 80 pF Switching Characteristics Delay Time Rise Time td tr IC = 500 mA, IB = 50 mA 15 25 ns Storage Time Fall Time ts tf IC = 500 mA, IB = 50 mA 175 35 ns |
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