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2N3737 Datasheet(PDF) 2 Page - Semicoa Semiconductor |
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2N3737 Datasheet(HTML) 2 Page - Semicoa Semiconductor |
2 / 2 page Copyright 2002 Semicoa Semiconductors, Inc. Rev. G 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com 2N3737 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Symbol Test Conditions Min Typ Max Units Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mA 40 Volts Collector-Base Cutoff Current ICBO1 ICBO2 VCB = 75 Volts VCB = 30 Volts 10 250 µA nA Collector-Emitter Cutoff Current ICEX1 ICEX2 VCE = 30 Volts, VEB = 2 Volts VCE = 30 Volts, VEB = 2 Volts, TA = 150°C 200 250 nA µA Emitter-Base Cutoff Current IEBO1 IEBO2 VEB = 5 Volts VEB = 4 Volts 10 100 µA nA On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Parameter Symbol Test Conditions Min Typ Max Units DC Current Gain hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 IC = 10 mA, VCE = 1 Volts IC = 150 mA, VCE = 1 Volts IC = 500 mA, VCE = 1 Volts IC = 1 A, VCE = 1.5 Volts IC = 1.5 A, VCE = 5 Volts IC = 500 mA, VCE = 1 Volts TA = -55°C 35 40 40 20 20 15 140 80 Base-Emitter Saturation Voltage VBEsat1 VBEsat2 VBEsat3 VBEsat4 IC = 10 mA, IB = 1 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 1 A, IB = 100 mA 0.9 0.8 1.0 1.2 1.4 Volts Collector-Emitter Saturation Voltage VCEsat1 VCEsat2 VCEsat3 VCEsat4 IC = 10 mA, IB = 1 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 1 A, IB = 100 mA 0.2 0.3 0.5 0.9 Volts Dynamic Characteristics Parameter Symbol Test Conditions Min Typ Max Units Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio |hFE| VCE = 10 Volts, IC = 50 mA, f = 100 MHz 2.5 6.0 Open Circuit Output Capacitance COBO VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz 9 pF Open Circuit Input Capacitance CIBO VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz 80 pF Switching Characteristics Delay Time Rise Time td tr VBE = 2 Volts, IC = 1 A, IB = 100 mA 8 40 ns Saturated Turn-Off Time tOFF IC = 1 A, IB1=IB2=100 mA 60 ns |
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