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T15M256B-85P Datasheet(PDF) 9 Page - Taiwan Memory Technology |
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T15M256B-85P Datasheet(HTML) 9 Page - Taiwan Memory Technology |
9 / 13 page TE CH tm T15M256B TM Technology Inc. reserves the right P. 9 Publication Date: OCT. 2003 to change products or specifications without notice. Revision:C Notes: 1. During this period, I/O pins are in the output state, so input signals of opposite phase to the outputs should not be applied. 2. The data output from D OUT are the same as the data written to D IN during the write cycle. 3. D OUT provides the read data for the next address. 4. Transition is measured ± 500 mV from steady state with C L = 5pF. This parameter is guaranteed but not 100% tested. 5. If OE is low during a WE controlled write cycle, the write pulse width must be the larger of tWP or (tWHZ + tDW) to allow the I/O drivers to turn off and data to be placed on the bus for the required tDW. If OE is high during a WE controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tWP. |
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