T436432B-6S datasheet(10/72 Pages) TMT

Part #	T436432B-6S

Description	2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM

Download	72 Pages

Scroll/Zoom	100%

Manufacturer	TMT [Taiwan Memory Technology]

Direct Link	http://www.tmtech.com.tw

Logo

10 / 72 page

TE

CH

tm

T436432B

TM Technology Inc. reserves the right

P. 10

Publication Date: FEB. 2007

to change products or specifications without notice.

Revision: A

CLK

C OMMA ND

T0

T1

T2T3

T4T5

T6T7

T8

DIN B2

NOP

WRITE A

NOP

WRITE B

NOP

DIN A0

DIN B0

DIN B1

DQ's

DIN B3

1 Clk Interval

Write Interrupted by a Write (Burst Length = 4, CAS# Latency = 1, 2, 3)

The Read command that interrupts a write burst without auto precharge function should be issued one

cycle after the clock edge in which the last data-in element is registered. In order to avoid data contention, input

data must be removed from the DQs at least one clock cycle before the first read data appears on the outputs

(refer to the following figure). Once the Read command is registered, the data inputs will be ignored and writes

will not be executed.

CL K

COM MA ND

T0

T 1

T2T3

T4T5

T6T7

T8

NOP

WRITE A

NOP

READ B

NOP

DIN A0

don't care

DOUT B2

DOUT B0

DOUT B1

DOUT B3

DIN A0

don't care

DOUT B2

DOUT B0

DOUT B1

DOUT B3

Input data for the write is masked.

Input data must be removed from the DQ's at least one clock

cycle before the Read data appears on the outputs to avoid

data contention.

CAS# latency=2

tCK2, DQ's

CAS# latency=3

tCK3, DQ's

Write Interrupted by a Read (Burst Length = 4, CAS# Latency = 2, 3)

The BankPrecharge/PrechargeAll command that interrupts a write burst without the auto precharge

function should be issued m cycles after the clock edge in which the last data-in element is registered, where m

equals tWR/tCK rounded up to the next whole number. In addition, the DQM signals must be used to mask input

data, starting with the clock edge following the last data-in element and ending with the clock edge on which

the BankPrecharge/PrechargeAll command is entered (refer to the following figure).

CLK

T0

T1

T2T3

T4T5

T6

WRITE

COM M AND

BANK (S)

ROW

NOP

Precharge

NOP

Activate

BA N K

COL n

DI N

n

DI N

n+ 1

DQM

ADDRESS

DQ

tWR

tRP

: don't care

Note: The DQMs can remain low in this example if the length of the write burst is 1 or 2.

Write to Precharge

Similar Part No. - T436432B-6S

Manufacturer	Part #	Datasheet	Description
Taiwan Memory Technolog...	T436416A	712Kb / 29P	4M X 16 SDRAM
	T436416A-10S	712Kb / 29P	4M X 16 SDRAM
	T436416A-10SG	712Kb / 29P	4M X 16 SDRAM
	T436416A-6S	712Kb / 29P	4M X 16 SDRAM
	T436416A-6SG	712Kb / 29P	4M X 16 SDRAM

More results

Similar Description - T436432B-6S

Manufacturer	Part #	Datasheet	Description
Samsung semiconductor	K4S643232E-TI	100Kb / 12P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
	K4S643232F-	99Kb / 12P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
	K4S643232F	101Kb / 12P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
	K4S643232C	1Mb / 43P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
	K4S643232E	102Kb / 12P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
	KM432S2030C	1Mb / 43P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
	K4S643232E-	101Kb / 12P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
Taiwan Memory Technolog...	T4312816B	665Kb / 70P	8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM
Elite Semiconductor Mem...	M52D32321A	690Kb / 29P	512K x 32Bit x 2Banks Synchronous DRAM
Etron Technology, Inc.	EM638325	762Kb / 72P	2M x 32 Synchronous DRAM (SDRAM)

More results

T436432B-6S Datasheet(PDF) 10 Page - Taiwan Memory Technology

T436432B-6S Datasheet(HTML) 10 Page - Taiwan Memory Technology

Similar Part No. - T436432B-6S

Similar Description - T436432B-6S

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72

Datasheet Download

Link URL