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HYB39SC256800FE-6 Datasheet(PDF) 4 Page - Qimonda AG |
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HYB39SC256800FE-6 Datasheet(HTML) 4 Page - Qimonda AG |
4 / 24 page Internet Data Sheet Rev. 1.25, 2007-06 4 03062006-NMGU-CQ9D HY[B/I]39SC256[80/16]0F[E/F] 256-MBit Synchronous DRAM 1.2 Description The HY[B/I]39SC256[80/16]0F[E/F] are four bank Synchronous DRAM’s organized as 16 MBit ×8 and 8 Mbit x16 respectively. These synchronous devices achieve high speed data transfer rates for CAS latencies by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock. The chip is fabricated with Qimonda advanced 0.11 µm 256-MBit DRAM process technology. The device is designed to comply with all industry standards set for synchronous DRAM products, both electrically and mechanically. All of the control, address, data input and output circuits are synchronized with the positive edge of an externally supplied clock. Operating the four memory banks in an interleave fashion allows random access operation to occur at a higher rate than is possible with standard DRAMs. A sequential and gapless data rate is possible depending on burst length, CAS latency and speed grade of the device. Auto Refresh (CBR) and Self Refresh operation are supported. These devices operate with a single 3.3 V ± 0.3 V power supply. All 256-Mbit components are available in PG– TSOPII–54 and PG-TFBGA-54 packages. TABLE 2 Ordering Information for RoHS Compliant Products Note: For product nomenclature see Chapter 6 of this data sheet Product Type1) 1) Please check with your Qimonda representative that leadtime and availability of your preferred device and version meet your project requirements. Speed Grade Description Package Note Standard Operating Temperature (0 to 70 °C) HYB39SC256800FE-6 PC166–333 166MHz 16M ×8 SDRAM PG-TSOPII-54 2) 2) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury, lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers. HYB39SC256160FE-6 166MHz 8M ×16 SDRAM HYB39SC256800FE-7 PC133–222 143MHz 16M ×8 SDRAM HYB39SC256800FEH-7 HYB39SC256160FE-7 143MHz 8M ×16 SDRAM HYB39SC256160FEH-7 HYB39SC256160FF-6 PC166–333 166MHz 8M ×16 SDRAM PG-TFBGA-54 2) HYB39SC256160FF-7 PC133–222 143MHz 8M ×16 SDRAM HYB39SC256800FF-7 143MHz 8M ×8SDRAM Industrial Operating Temperature (-40 to 85 °C) HYI39SC256800FE-6 PC166–333 166MHz 16M ×8 SDRAM PG-TSOPII-54 2) HYI39SC256160FE-6 166MHz 8M ×16 SDRAM HYI39SC256800FE-7 PC133–222 143MHz 16M ×8 SDRAM HYI39SC256160FE-7 143MHz 8M ×16 SDRAM |
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